LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-305-C4-311
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
P. Gondi
Keyword(s):  
Lattice Defect ◽  
Scanning Microscopy ◽  
Induced Current

Observation of Phase Contrast Images in STEM and CTEM Modes by Using 100 kV Field Emission Electron Gun

1974 ◽  
Vol 32 ◽  
pp. 390-391
Author(s):  
Y. Harada ◽  
T. Goto ◽  
H. Koike ◽  
T. Someya
Keyword(s):  
Field Emission ◽  
Phase Contrast ◽  
Image Formation ◽  
Fresnel Diffraction ◽  
Experimental Results ◽  
Electron Gun ◽  
Scanning Microscopy ◽  
Emission Electron ◽  
Lattice Images

Since phase contrasts of STEM images, that is, Fresnel diffraction fringes or lattice images, manifest themselves in field emission scanning microscopy, the mechanism for image formation in the STEM mode has been investigated and compared with that in CTEM mode, resulting in the theory of reciprocity. It reveals that contrast in STEM images exhibits the same properties as contrast in CTEM images. However, it appears that the validity of the reciprocity theory, especially on the details of phase contrast, has not yet been fully proven by the experiments. In this work, we shall investigate the phase contrast images obtained in both the STEM and CTEM modes of a field emission microscope (100kV), and evaluate the validity of the reciprocity theory by comparing the experimental results.

Contrast from epitaxially sandwiched macromolecules

1978 ◽  
Vol 36 (2) ◽  
pp. 226-227
Author(s):  
M. Talianker ◽  
D.G. Brandon
Keyword(s):  
Gold Film ◽  
Lattice Defect ◽  
Gold Foil ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Resolution Limit ◽  
Transmission Electron ◽  
Crystal Lattice Defect ◽  
Void Effect ◽  
Lattice Resolution

A new specimen preparation technique for visualizing macromolecules by conventional transmission electron microscopy has been developed. In this technique the biopolymer-molecule is embedded in a thin monocrystalline gold foil. Such embedding can be performed in the following way: the biopolymer is deposited on an epitaxially-grown thin single-crystal gold film. The molecule is then occluded by further epitaxial growth. In such an epitaxial sandwich an occluded molecule is expected to behave as a crystal-lattice defect and give rise to contrast in the electron microscope.The resolution of the method should be limited only by the precision with which the epitaxially grown gold reflects the details of the molecular structure and, in favorable cases, can approach the lattice resolution limit.In order to estimate the strength of the contrast due to the void-effect arising from occlusion of the DNA-molecule in a gold crystal some calculations were performed.

Examination of Schistosome Cercariae and Schistosomules by Scanning Electron Microscopy

1969 ◽  
Vol 27 ◽  
pp. 50-51
Author(s):  
D. Johnson ◽  
P. Moriearty
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Light Microscopy ◽  
Surface Structure ◽  
Extensive Study ◽  
Scanning Microscopy ◽  
Host Parasite ◽  
Conventional Electron Microscopy ◽  
Scanning Electron

Since several species of Schistosoma, or blood fluke, parasitize man, these trematodes have been subjected to extensive study. Light microscopy and conventional electron microscopy have yielded much information about the morphology of the various stages; however, scanning electron microscopy has been little utilized for this purpose. As the figures demonstrate, scanning microscopy is particularly helpful in studying at high resolution characteristics of surface structure, which are important in determining host-parasite relationships.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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