GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-363-C1-368 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
G. K. Celler ◽  
L. E. Trimble
Keyword(s):  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Grain boundary diffusion of aluminum in polycrystalline silicon films

1980 ◽  
Vol 51 (3) ◽  
pp. 1576-1581 ◽  
Author(s):  
J. C. M. Hwang ◽  
P. S. Ho ◽  
J. E. Lewis ◽  
D. R. Campbell
Keyword(s):  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Structural Changes During Transient Post-Annealing of Preannealed and Arsenic Implanted Polycrystalline Silicon Films

1985 ◽  
Vol 52 ◽  
Author(s):  
S. J. Krause ◽  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson ◽  
J. A. Leavitt ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Sheet Resistance ◽  
Network Structure ◽  
Cellular Network ◽  
Polycrystalline Silicon ◽  
Structural Changes ◽  
Silicon Films ◽  
Post Annealing ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films were transient preannealed, As implanted, and transient post-annealed at peak temperatures up to 1250°C for times up to 17.5 seconds. Structural changes occurring during post-annealing were examined by transmission electron microscopy. These results were correlated to Rutherford Backscattering and sheet resistance results. The grain size, which increased from 5–20 to 150–300 nm during preannealing, did not increase during post-annealing. During early stages of post-annealing, As diffused along grain boundaries and generated dislocation sources at grain boundary surfaces. Subsequently, as annealing progressed, a fine, As-rich cellular network structure propagated into the grains until the structure of an entire grain was transformed into a fine cellular network at the longest annealing times. Residual stresses in the film were relieved during formation of the network structure. The sheet resistance of preannealed samples, in comparison with non-preannealed samples with similar implantation and final transient anneals, was lower at shorter annealing times due to the larger grain size, which increased mobility, and the reduced grain boundary area, which trapped less As. It was also lower at longer annealing times due to the formation of the cellular network structure. In subsequent furnace stability tests for 30 minutes at 700–900°C, the sheet resistance increased less for preannealed than for non-preannealed samples.

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