CONTRIBUTION OF SINGLE POLARON HOPPING TO AC CONDUCTION IN AMORPHOUS CHALCOGENIDES

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-167-C4-170 ◽  
Author(s):  
K. Shimakawa
Keyword(s):  
Polaron Hopping ◽  
Amorphous Chalcogenides ◽  
Ac Conduction

Inverse-photoemission spectra of amorphous chalcogenides

1993 ◽  
Vol 164-166 ◽  
pp. 1199-1202 ◽  
Author(s):  
S. Hosokawa ◽  
Y. Hari ◽  
K. Nishihara ◽  
M. Tamura ◽  
M. Taniguchi
Keyword(s):  
Inverse Photoemission ◽  
Amorphous Chalcogenides

scholarly journals Light-induced mass transport in amorphous chalcogenides: Toward surface plasmon-assisted nanolithography and near-field nanoimaging

2014 ◽  
Vol 251 (7) ◽  
pp. 1354-1362 ◽  
Author(s):  
M. L. Trunov ◽  
P. M. Lytvyn ◽  
P. M. Nagy ◽  
A. Csik ◽  
V. M. Rubish ◽  
...  
Keyword(s):  
Mass Transport ◽  
Surface Plasmon ◽  
Near Field ◽  
Amorphous Chalcogenides

Small polaron hopping conduction mechanism in Fe doped LaMnO3

2011 ◽  
Vol 135 (5) ◽  
pp. 054501 ◽  
Author(s):  
Wasi Khan ◽  
Alim H. Naqvi ◽  
Maneesha Gupta ◽  
Shahid Husain ◽  
Ravi Kumar
Keyword(s):  
Conduction Mechanism ◽  
Small Polaron ◽  
Hopping Conduction ◽  
Polaron Hopping ◽  
Small Polaron Hopping

The Effect of Radiation Induced Disorder on La0.7Ca0.3MnO3–δ Thin Films

1997 ◽  
Vol 494 ◽  
Author(s):  
R. M. Stroud ◽  
V. M. Browning ◽  
J. M. Byers ◽  
D. B. Chrisey ◽  
W. W. Fuller-Mora ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Pulsed Laser ◽  
Magnetic Ordering ◽  
Metal Insulator ◽  
Polaron Hopping ◽  
Effects Of Disorder ◽  
Radiation Induced ◽  
Characteristic Relationship ◽  
Peak Resistance

ABSTRACTThe effects of disorder on the transport and magnetic properties of pulsed laser deposited La0.7Ca0.3MnO3 thin films were studied. Ion irradiation with 10 MeV I and 6 MeV Si ions was used to produce controlled levels of defects ranging from 0.006 to 0.024 displacements per atom. The peak resistance temperature of the I-irradiated films decreased from 264K for the undamaged film to OK for the 0.016 dpa film. The magnetic ordering temperature decreased from 270K (undamaged) to 130K (0.011 dpa), and remained nearly constant at 130K for higher damage levels. This demonstrates a decoupling of the magnetic and metal-insulator transitions. A characteristic relationship between the peak resistance temperature and activation energy of resistance with the form Tp = 285(1-Δρ/115)0.13, was observed for all films. This characteristic relationship indicates that the range of resistivity and magnetoresistivity values for observed La0.7Ca0.3MnO3 can be explained in terms of disorder-limited polaron hopping.

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