CORRELATION OF ELECTRICAL PROPERTIES OF a-SiHxMIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACE

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-475-C4-478
Author(s):  
C. R. Wronski ◽  
Y. Goldstein ◽  
S. Kelemen ◽  
B. Abeles ◽  
H. Witzke
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
The State ◽  
Cell Structures

Opto- electrical properties of p-SnSe:S/N-Si heterojunction for solar cell application

2020 ◽  
Author(s):  
Ghuzlan Sarhan Ahmed ◽  
Bushra K. H. Al-Maiyaly ◽  
Bushra H. Hussein ◽  
Hanan K. Hassun
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Solar Cell Application

Effects of ion beam hydrogenation on silicon solar cell structures

1982 ◽  
Vol 95 (4) ◽  
pp. 369-375 ◽  
Author(s):  
D.J. Sharp ◽  
J.K.G. Panitz ◽  
C.H. Seager
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Cell Structures

scholarly journals Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

2014 ◽  
Vol 571 ◽  
pp. 756-761 ◽  
Author(s):  
Daisuke Murata ◽  
Tetsuya Yuguchi ◽  
Hiroyuki Fujiwara
Keyword(s):  
Solar Cell ◽  
Spectroscopic Ellipsometry ◽  
Tandem Solar Cell ◽  
Cell Structures

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

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