scholarly journals THE LOCAL SPIN-DENSITY-FUNCTIONAL METHOD : APPLICATION TO THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS

1980 ◽  
Vol 41 (C5) ◽  
pp. C5-317-C5-323
Author(s):  
A. Ghazali ◽  
P. Leroux-Hugon
Author(s):  
YOSUKE HARASHIMA ◽  
KEITH SLEVIN

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.


2001 ◽  
Vol 64 (18) ◽  
Author(s):  
S. Klimm ◽  
M. Herz ◽  
R. Horny ◽  
G. Obermeier ◽  
M. Klemm ◽  
...  

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