HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION

J. R. Meyer; F. J. Bartoli; M. R. Kruer

doi:10.1051/jphyscol:1980405

HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1980405 ◽

1980 ◽

Vol 41 (C4) ◽

pp. C4-31-C4-36

Author(s):

J. R. Meyer ◽

F. J. Bartoli ◽

M. R. Kruer

Keyword(s):

Laser Radiation ◽

Amorphous Silicon

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Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation

Semiconductors ◽

10.1134/s1063782611020254 ◽

2011 ◽

Vol 45 (2) ◽

pp. 265-270 ◽

Cited By ~ 13

Author(s):

V. A. Volodin ◽

A. S. Kachko

Keyword(s):

Laser Radiation ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Pulsed Laser ◽

Silicon Films ◽

Pulsed Laser Radiation ◽

Hydrogenated Amorphous ◽

Femtosecond Pulsed Laser

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Effect of Implanted Phosphorus Ions on the Crystallization of Amorphous Silicon Films under the Action of Pulsed Excimer Laser Radiation

Technical Physics Letters ◽

10.1134/1.1877624 ◽

2005 ◽

Vol 31 (2) ◽

pp. 128 ◽

Cited By ~ 1

Author(s):

M. D. Efremov

Keyword(s):

Laser Radiation ◽

Amorphous Silicon ◽

Excimer Laser ◽

Silicon Films ◽

Excimer Laser Radiation

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Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Applied Physics Letters ◽

10.1063/1.4747207 ◽

2012 ◽

Vol 101 (8) ◽

pp. 081902 ◽

Cited By ~ 23

Author(s):

Andrey V. Emelyanov ◽

Andrey G. Kazanskii ◽

Mark V. Khenkin ◽

Pavel A. Forsh ◽

Pavel K. Kashkarov ◽

...

Keyword(s):

Laser Radiation ◽

Femtosecond Laser ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Femtosecond Laser Radiation ◽

Visible Luminescence ◽

Hydrogenated Amorphous

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Laser Epitaxy Over Buried Layers

MRS Proceedings ◽

10.1557/proc-1-427 ◽

1980 ◽

Vol 1 ◽

Author(s):

S. P. Weeks ◽

G. K. Celler ◽

H. J. Leamy

Keyword(s):

Laser Radiation ◽

Amorphous Silicon ◽

Surface Topography ◽

Impurity Atoms ◽

Layer Structures ◽

Silicon Vapor ◽

Buried Layer ◽

Buried Layers ◽

Antimony Impurity ◽

Impurity Profiles

ABSTRACTThe redistribution of antimony impurity atoms implanted in (111) and (100) substrates was studied as a function of the power density of Q-switched YAG laser radiation (λ = 0.53μm) used to recrystallize 4700Å films of amorphous silicon vapor deposited over blanket and patterned Sb buried layer structures. Results for fully crystallized layers show impurity profiles ranging from a sharp interface displaced outward slightly relative to the as-grown interface, to complete redistribution of antimony into the deposited layer. Studies of patterned buried layer structures indicate that epitaxial crystallization can be achieved on (111) and (100) substrates without serious damage to the surface topography necessary for subsequent mask alignment.

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