TRANSPORT COEFFICIENTS OF DENSE PLASMAS

1980 ◽  
Vol 41 (C2) ◽  
pp. C2-69-C2-76 ◽  
Author(s):  
M. Baus
2011 ◽  
Vol 51 (4) ◽  
pp. 355-360 ◽  
Author(s):  
V. S. Karakhtanov ◽  
R. Redmer ◽  
H. Reinholz ◽  
G. Röpke

1998 ◽  
Vol 16 (1) ◽  
pp. 71-81 ◽  
Author(s):  
N. H. March ◽  
M. P. Tosi

Recent computer experiments on liquid Mg and Bi (and also on dense hydrogen) have focussed anew on issues involving static and dynamical structure in plasmas. In Mg and Bi, under normal liquid metal conditions, separation of core and valence electrons is valuable both for thermodynamics and in interpreting diffraction experiments. Mg is considered in some detail as a specific example where there is weak electron–ion interaction. Finally, dynamical structure is considered. After a brief summary relating back to the electron–electron pair correlation contribution in X-ray scattering, attention is next focussed on the (longitudinal) viscosity of alkali metals via the Kubo formula. This viscosity is shown to be dominated by ion–ion interactions. Nevertheless, an intimate relation at the melting point is exposed between shear viscosity, thermal conductivity, and electrical resistivity, the latter two transport coefficients being dominated by electrons.


2016 ◽  
Vol 116 (7) ◽  
Author(s):  
Jérôme Daligault ◽  
Scott D. Baalrud ◽  
Charles E. Starrett ◽  
Didier Saumon ◽  
Travis Sjostrom

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.


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