Ultrafast photo-response in (EDO)2PF6

2004 ◽  
Vol 114 ◽  
pp. 143-145 ◽  
Author(s):  
Naoki Uchida ◽  
Shin-ya Koshihara ◽  
Tadahiko Ishikawa ◽  
Akira Ota ◽  
Souichi Fukaya ◽  
...  
Keyword(s):  
Photo Response

Preparation and Photo-catalytic Activity of Cu-Supported Nano-TiO2

2020 ◽  
Vol 1 (1) ◽  
pp. 38-42
Author(s):  
Jun Yan
Keyword(s):  
Catalytic Activity ◽  
Methyl Orange ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Nano Tio2 ◽  
Hydrolysis Method ◽  
Response Range ◽  
Photo Response ◽  
Forced Hydrolysis ◽  
Visible Photocatalytic Activity

Cu-supported nano-TiO2 catalyst was prepared by forced hydrolysis method under mild condition. The morphology, composition and optical absorption properties of the samples were characterized by means of scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and UV-Vis diffuse reflectance spectroscopy (UV-VIS DRS). Visible photocatalytic activity of the samples was investigated by photocatalytic degradation experiment on methyl orange. The results indicated that nano-TiO2 was about 20nm in size with the main form of anatase, and photo response range was significantly broadened after it was loaded on the surface of Cu. The sample possessed high visible light catalytic activity, with the degradation rate of methyl orange reaching 94% under simulated natural light.

scholarly journals Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 194
Author(s):  
Maxime Bouschet ◽  
Ulises Zavala-Moran ◽  
Vignesh Arounassalame ◽  
Rodolphe Alchaar ◽  
Clara Bataillon ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Imaging ◽  
Diffusion Length ◽  
Lateral Diffusion ◽  
Pixel Detector ◽  
Dark Current Density ◽  
Etching Depth ◽  
Photo Response ◽  
Wet Chemical ◽  
Absorbing Layer

In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong influence of the lateral diffusion length of a shallow-etched pixel on the electro-optical properties of the device. The lowest dark current density was recorded for the deep-etched detector, on the order of 1 × 10−5 A/cm2 at 150 K and a bias operation equal to −400 mV. The corresponding quantum efficiency was measured at 60% (without anti-reflection coating) for a 3 µm thick absorbing layer. A comparison of experimental results obtained on the two kinds of etched pixels demonstrates the need for a deep-etching process combined with efficient passivation for FPA manufacturing.

Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Selenium Concentration ◽  
Alloy Film ◽  
Dark Conductivity ◽  
Flow Rate Ratio ◽  
Selenium Atom ◽  
Alloy Films ◽  
Hydrogen Dilution ◽  
Photo Response

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

scholarly journals Thin-film structures with nanocrystals: an origin of enhanced photo-response

2010 ◽  
Vol 249 ◽  
pp. 012063
Author(s):  
O Goncharova ◽  
R M Montereali ◽  
G Baldacchini
Keyword(s):  
Thin Film ◽  
Photo Response

Dual functional photo-response for p-Si/SiO2/n-InGaZnO graphene nanocomposites photodiodes

2018 ◽  
Vol 29 (50) ◽  
pp. 505202 ◽  
Author(s):  
Chun-Ying Huang ◽  
Ming-Liang Chen ◽  
Chun-Wei Yu ◽  
Tsung-Chih Wan ◽  
Shih-Hsuan Chen ◽  
...  
Keyword(s):  
Graphene Nanocomposites ◽  
Dual Functional ◽  
Photo Response

scholarly journals The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Yongpeng Xu ◽  
Junjie Yang ◽  
Naiyun Tang ◽  
Zhong Tang
Keyword(s):  
Schottky Barrier ◽  
Response Curve ◽  
Photoelectric Effect ◽  
Ultrafast Laser ◽  
Characteristic Parameters ◽  
Pv Array ◽  
Array Electrode ◽  
Photo Response ◽  
Positive Peak ◽  
Semiconductor Contact

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model ofpnjunction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced fromp-njunction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by thepnjunction.

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