Cathode sputtered permalloy films of high anisotropic magnetoresistive effect

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-461-Pr2-464 ◽  
Author(s):  
P. Aigner ◽  
G. Stangl ◽  
H. Hauser ◽  
J. Hochreiter
Keyword(s):  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

scholarly journals Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5785
Author(s):  
Dmitry Zhukov ◽  
Vladimir Amelichev ◽  
Sergey Kasatkin ◽  
Dmitry Kostyuk
Keyword(s):  
Magnetron Sputtering ◽  
Silicon Wafer ◽  
Experimental Studies ◽  
Practical Application ◽  
Easy Magnetization ◽  
Mechanical Loads ◽  
Multilayer Nanostructures ◽  
Magnetic Layers ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.

Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effect

2000 ◽  
Vol 29 (2) ◽  
pp. 137-146 ◽  
Author(s):  
S. I. Kasatkin ◽  
A. M. Murav’ev ◽  
N. P. Vasil’eva ◽  
V. V. Lopatin ◽  
F. F. Popadinets ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Sensors ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Current Sensor Based on Anisotropic Magnetoresistive Effect

2021 ◽  
pp. 1-1
Author(s):  
Petr Belyakov ◽  
Vladimir Amelichev ◽  
Dmitry Kostyuk ◽  
Yury Kazakov ◽  
Evgeny Orlov ◽  
...  
Keyword(s):  
Current Sensor ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Microsystems with High Conversion Coefficient of a Weak Magnetic Field Based on Magnetoresistive Nanostructures

2020 ◽  
Vol 25 (5) ◽  
pp. 432-439
Author(s):  
V.V. Amelichev ◽  
◽  
A.A. Reznev ◽  
A.N. Saurov ◽  
◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Conversion Coefficient ◽  
Experimental Studies ◽  
Transfer Characteristic ◽  
Special Equipment ◽  
Giant Magnetoresistive Effect ◽  
Highly Sensitive ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

The magnetoresistive transducers of magnetic field have been claimed both for direct and indirect applications in various areas of industry, transport and special equipment. In the paper the special features of used terminology and dimensions in the main parameters of magnetic field magnetoresistive transformers have been revealed. The main results of experimental studies on the developed thin-film magnetoresistive nanostructures (TMN) with even and odd transfer characteristics have been presented. The TMN design on an anisotropic magnetoresistive effect has an odd transfer characteristic and conversion coefficient at the level of 8 mV/V/E. The TMN design based on a giant magnetoresistive effect has an even transfer characteristic and a conversion coefficient at the level of 27 mV/V/E. The results of promising design and technological solutions allowing reaching the values of conversion coefficient of TMN at the level exceeding 100 mV/V/E have been shown. The results of the study of the test spin-tunnel magnetoresistive nanostructure (spin-tunnel TMN) with giant magnetoresistive effect, exceeding 100% have been presented. The novelty of the obtained results has been reflected and the perspective of using highly sensitive TMN and creating the non-volatile MRAM on the basis of thin-film magnetoresistive structure with the spin-tunnel magnetoresistive effect have been determined.

Anisotropic giant magnetoresistive effect in the sandwich based FexNi1−x (x ≈ 0.5) and Cu

2018 ◽  
Vol 91 (12) ◽  
Author(s):  
Yurii O. Shkurdoda ◽  
Leonid V. Dekhtyaruk ◽  
Andrii G. Basov ◽  
Anatoliy P. Kharchenko ◽  
Anatoliy M. Chornous ◽  
...  
Keyword(s):  
Giant Magnetoresistive Effect ◽  
Magnetoresistive Effect

Spin Dynamics of Magnetoresistive Oxides

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3355-3358 ◽  
Author(s):  
J. W. Lynn
Keyword(s):  
Spin Diffusion ◽  
Spin Dynamics ◽  
Wave Dispersion ◽  
Fluctuation Spectrum ◽  
Optimal Doping ◽  
Scattering Measurements ◽  
Diffusion Component ◽  
Magnetoresistive Effect ◽  
Different Origin ◽  
Strong Spin

A review is given of the neutron scattering measurements of the spin dynamics of the magnetoresistive oxides. A number of anomalous features have been identified in the manganites, including very strong damping of the spin waves in the ground state and as a function of temperature, anomalous spin wave dispersion and the development of a strong spin-diffusion component to the fluctuation spectrum well below T C in the region of optimal doping. For the Tl2Mn2O7 pyrochlore, on the other hand, the behavior of the spin dynamics is conventional, which argues that the mechanism responsible for the magnetoresistive effect has a different origin in these two classes of materials.

Enhanced Transverse Magnetoresistive Effect in Semiconducting Diamond Films

2000 ◽  
Vol 17 (5) ◽  
pp. 370-372 ◽  
Author(s):  
Wang Wan-Lu ◽  
Liao Ke-Jun ◽  
Wang Bi-Ben
Keyword(s):  
Diamond Films ◽  
Semiconducting Diamond ◽  
Magnetoresistive Effect
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