scholarly journals High-Tc SQUIDs on Silicon Substrates

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-361-C3-365 ◽  
Author(s):  
P. Seidel ◽  
S. Linzen ◽  
F. Schmidl ◽  
R. Cihar
Keyword(s):  
Silicon Substrates ◽  
High Tc

Application of silicon substrates for high-Tc Josephson junctions and SQUIDs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-297-Pr3-300 ◽  
Author(s):  
S. Linzen ◽  
Y. J. Tian ◽  
U. Hübner ◽  
F. Schmidl ◽  
J. Scherbel ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Silicon Substrates ◽  
High Tc

PREPARATION OF HIGH-Tc YBaCuO THIN FILMS ON YSZ AND SILICON SUBSTRATES BY r.f.-MAGNETRON SPUTTERING

1989 ◽  
pp. 303-310
Author(s):  
D. DUBREUIL ◽  
G. GARRY ◽  
Y. LEMAÎTRE ◽  
L. ROGIER ◽  
D. DIEUMEGARD
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Silicon Substrates ◽  
High Tc

Preparation of high-Tc YBaCuO thin films on YSZ and silicon substrates by r.f.-magnetron sputtering

1989 ◽  
Vol 151 ◽  
pp. 303-310 ◽  
Author(s):  
D Dubreuil ◽  
G Garry ◽  
Y Lemaître ◽  
L Rogier ◽  
D Dieumegard
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Silicon Substrates ◽  
High Tc

DC-sputtered high tc superconducting YBCO thin films on silicon substrates

1993 ◽  
Vol 1 (3-6) ◽  
pp. 853-857
Author(s):  
Lelia Ciontea ◽  
Traian Petrisor ◽  
Alin Giurgiu
Keyword(s):  
Thin Films ◽  
Silicon Substrates ◽  
High Tc ◽  
Ybco Thin Films

ChemInform Abstract: High TC Superconductive Thin Films on Silicon Substrates

ChemInform ◽  
1988 ◽  
Vol 19 (28) ◽  
Author(s):  
G. POULLAIN ◽  
B. MERCEY ◽  
H. MURRAY ◽  
B. RAVEAU
Keyword(s):  
Thin Films ◽  
Silicon Substrates ◽  
High Tc

High Tc step‐edge Josephson junctions on silicon substrates

1995 ◽  
Vol 67 (15) ◽  
pp. 2235-2237 ◽  
Author(s):  
S. Linzen ◽  
F. Schmidl ◽  
L. Dörrer ◽  
P. Seidel
Keyword(s):  
Josephson Junctions ◽  
Step Edge ◽  
Silicon Substrates ◽  
High Tc

HIGH Tc “1 2 3” SUPERCONDUCTIVE FILMS ON SILICON SUBSTRATES

1988 ◽  
Vol 02 (01) ◽  
pp. 523-526 ◽  
Author(s):  
G. POULLAIN ◽  
B. MERCEY ◽  
H. MURRAY ◽  
B. RAVEAU
Keyword(s):  
Orthorhombic Phase ◽  
Buffer Layers ◽  
Pure Oxygen ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
High Tc ◽  
Zero Resistance ◽  
Pure Oxygen Atmosphere ◽  
Diffraction Patterns

YBa2Cu3O7 films have been deposited by pulse laser evaporation on silicon substrates with metal nitrides (AIN, Si 3 N 4, GaN) buffer layers. The film superconductivity is restored after annealing at 900°C in pure oxygen atmosphere. X-ray diffraction patterns confirm the presence of the orthorhombic phase and resistivity measurements versus temperature shows a resistive transition with an onset at 90 K and a complete zero resistance at 70 K.

scholarly journals ERRATA: HIGH Tc “1 2 3” SUPERCONDUCTIVE FILMS ON SILICON SUBSTRATES

1988 ◽  
Vol 02 (05) ◽  
pp. 753-753
Author(s):  
G. POULLAIN ◽  
B. MERCEY ◽  
H. MURRAY ◽  
B. RAVEAU
Keyword(s):  
Silicon Substrates ◽  
High Tc

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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