scholarly journals Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-123-C3-130
Author(s):  
A. TOUNSI ◽  
E. SCHEID ◽  
C. AZZARO ◽  
P. DUVERNEUIL ◽  
J. P. COUDERC
Keyword(s):  
Process Modelling ◽  
Polysilicon Films ◽  
Phosphorus Doped

A novel n+-polysilicon on n-silicon iso-type diode

1996 ◽  
Vol 74 (S1) ◽  
pp. 186-188
Author(s):  
S. Mohajerzadeh ◽  
C. R. Selvakumar
Keyword(s):  
Energy Barrier ◽  
Exponential Behavior ◽  
Si Substrates ◽  
Current Voltage ◽  
Polysilicon Films ◽  
Current Voltage Characteristics ◽  
Film Substrate ◽  
Phosphorus Doped

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films

1996 ◽  
Vol 51-52 ◽  
pp. 379-384 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
H. Lhermite ◽  
O. Bonnaud ◽  
D. Briand
Keyword(s):  
Experimental Determination ◽  
Hall Factor ◽  
Polysilicon Films ◽  
Phosphorus Doped

Microstructures of Polysilicon

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
In Situ Heating ◽  
Phosphorus Doped ◽  
Microstructural Studies

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.

The structure, morphology and resistivity of in situ phosphorus doped polysilicon films

1994 ◽  
Vol 247 (2) ◽  
pp. 156-161 ◽  
Author(s):  
V.P Lesnikova ◽  
A.S Turtsevich ◽  
V.Y Krasnitsky ◽  
V.A Emelyanov ◽  
O.Y Nalivaiko ◽  
...  
Keyword(s):  
Structure Morphology ◽  
Polysilicon Films ◽  
Phosphorus Doped

Electrical conductivity behaviour of thin in situ phosphorus doped VLPCVD polysilicon films

1993 ◽  
Vol 33 (1-2) ◽  
pp. 145-149
Author(s):  
M. Mokhtari ◽  
B. Fortin ◽  
O. Bonnaud ◽  
A. Liba ◽  
M. Sarret
Keyword(s):  
Electrical Conductivity ◽  
Polysilicon Films ◽  
Conductivity Behaviour ◽  
Phosphorus Doped

Low-temperature crystallization of in situ phosphorus-doped low-pressure chemical-vapour deposited amorphous silicon

1987 ◽  
Vol 65 (8) ◽  
pp. 1030-1032 ◽  
Author(s):  
D. Waechter ◽  
N. G. Tarr
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Phosphorus Concentration ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Phosphorus Doped ◽  
Secondary Ion

A method has been developed for producing low-resistivity phosphorus-doped polysilicon films with a minimum thermal budget. The method involves low-pressure chemical-vapor deposition of amorphous silicon at 560 °C followed by crystallization at 650 °C. Films formed in this manner are compared to films deposited polycrystalline at 627 °C. In both cases, in situ doping is achieved by addition of PH3 diluted in SiH4 to the gas mixture. For a given SiH4: PH3 flow ratio, the phosphorus concentration determined from secondary-ion mass spectroscopy is four times larger in the amorphous-deposited material. Moreover, the resistivity is substantially lower in this material even when the dopant concentrations are similar. The latter result may be due in part to reduced dopant segregation to grain boundaries. The internal strain determined from the Raman line width is larger in the polycrystalline-deposited material but could be reduced by high-temperature annealing.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  
Keyword(s):  
Flat Band ◽  
Gas Mixture ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Boron Doped ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

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