scholarly journals Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-99-C3-105
Author(s):  
J. SIMON ◽  
R. FEURER ◽  
A. REYNES ◽  
R. MORANCHO
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Growth Rates ◽  
Gas Phase Reactions ◽  
Mass Spectrometry Study ◽  
Phosphorus Doped

Five vs Six Membered-Ring PAH Products from Reaction of o-Methylphenyl Radical and two C3H4 Isomers

2021 ◽  
Author(s):  
Oisin J Shiels ◽  
Matthew Brian Prendergast ◽  
John Savee ◽  
David L Osborn ◽  
Craig A. Taatjes ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Membered Ring ◽  
Gas Phase Reactions

Gas-phase reactions of the o-methylphenyl (o-CH3C6H4) radical with the C3H4 isomers allene (H2C=C=CH2) and propyne (HCºC-CH3) are studied at 600 K and 4 Torr (533 Pa) using VUV synchrotron photoionisation mass spectrometry,...

Gas Phase and Surface Reactions in Mocvd of GaAs from Triethylgallium, Trimethylgallium, and Organometallic Arsenic Precursors

1988 ◽  
Vol 131 ◽  
Author(s):  
Thomas R. Omstead ◽  
Penny M. Van Sickle ◽  
Klavs F. Jensen
Keyword(s):  
Gas Phase ◽  
Low Temperatures ◽  
Surface Reactions ◽  
Rate Data ◽  
Gas Phase Reactions ◽  
Heated Zone ◽  
Model Predictions ◽  
First Time ◽  
Good Agreement

ABSTRACTThe growth of GaAs from triethylgallium (TEG) and trimethylgallium (TMG) with tertiarybutylarsine (tBAs), triethylarsenic (TEAs), and trimethylarsenic (TMAs), has been investigated by using a reactor equipped with a recording microbalance for in situ rate measurements. Rate data show that the growth with these precursors is dominated by the formation of adduct compounds in the gas lines, by adduct related parasitic gas phase reactions in the heated zone, and by the surface reactions. A model is proposed for the competition between deposition reactions and the parasitic gas phase reactions. Model predictions are in very good agreement with experimental data for all combinations of precursors except for TEG/TMAs where extensive gallium droplet formation is observed at low temperatures. Growth of reasonable quality GaAs with Hall mobilities of 7600 cm2/Vs at 77 K using TEG and tBAs is reported for the first time.

Metallic Fe nanoparticles trapped in self-adapting nanoreactors: a novel high-capacity anode for aqueous Ni–Fe batteries

2017 ◽  
Vol 53 (94) ◽  
pp. 12661-12664 ◽  
Author(s):  
Linpo Li ◽  
Jianhui Zhu ◽  
Yanli Niu ◽  
Zuhong Xiong ◽  
Jian Jiang
Keyword(s):  
Gas Phase ◽  
Single Phase ◽  
High Capacity ◽  
Gas Phase Reactions ◽  
Cyclic Durability ◽  
Fe Nanoparticles

An in situ evolution method via gas-phase reactions is developed to make single-phase Fe nanoparticles confined in thick C nanoreactors for Ni–Fe cells. Such smart hybrids exhibit prominent anodic performance on both stored capacity and cyclic durability.

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