Unusual exponents in interface roughening: the effects of pinning

1991 ◽  
Vol 1 (10) ◽  
pp. 1139-1146 ◽  
Author(s):  
Mogens H. Jensen ◽  
Itamar Procaccia
Keyword(s):  
Interface Roughening

scholarly journals Interface Roughening in Two Dimensions

2021 ◽  
Vol 182 (3) ◽  
Author(s):  
Gernot Münster ◽  
Manuel Cañizares Guerrero
Keyword(s):  
Field Theory ◽  
Monte Carlo ◽  
Capillary Wave ◽  
System Size ◽  
Two Dimensions ◽  
Two Dimensional ◽  
Wave Approximation ◽  
Statistical Field ◽  
Statistical Field Theory ◽  
Interface Roughening

AbstractRoughening of interfaces implies the divergence of the interface width w with the system size L. For two-dimensional systems the divergence of $$w^2$$ w 2 is linear in L. In the framework of a detailed capillary wave approximation and of statistical field theory we derive an expression for the asymptotic behaviour of $$w^2$$ w 2 , which differs from results in the literature. It is confirmed by Monte Carlo simulations.

Some new features of interface roughening dynamics in paper-wetting experiments

2000 ◽  
Vol 80 (7) ◽  
pp. 503-509 ◽  
Author(s):  
Alexander S. Balankin ◽  
Armandobravo Ortega ◽  
Daniel Moralesmatamoros
Keyword(s):  
Interface Roughening

Cluster-update acceleration of interface roughening in the 3D Ising model

1991 ◽  
Vol 66 (5) ◽  
pp. 530-533 ◽  
Author(s):  
Martin Hasenbusch ◽  
Steffen Meyer
Keyword(s):  
Ising Model ◽  
Interface Roughening ◽  
3D Ising Model

scholarly journals Interface Roughening with a Time-Varying External Driving Force

1993 ◽  
Vol 21 (4) ◽  
pp. 401-406 ◽  
Author(s):  
E Hernández-García ◽  
T Ala-Nissila ◽  
M Grant
Keyword(s):  
Driving Force ◽  
Time Varying ◽  
Interface Roughening ◽  
External Driving

Interface roughening in surfactant deposition

1994 ◽  
Vol 65 (20) ◽  
pp. 2609-2611 ◽  
Author(s):  
Shigehiko Hasegawa ◽  
Robert G. Ryland ◽  
Ellen D. Williams
Keyword(s):  
Interface Roughening

Anomalous interface roughening in porous media: Experiment and model

1992 ◽  
Vol 45 (12) ◽  
pp. R8313-R8316 ◽  
Author(s):  
S. V. Buldyrev ◽  
A.-L. Barabási ◽  
F. Caserta ◽  
S. Havlin ◽  
H. E. Stanley ◽  
...  
Keyword(s):  
Porous Media ◽  
Interface Roughening

The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces

1986 ◽  
Vol 1 (4) ◽  
pp. 537-542 ◽  
Author(s):  
Jeffrey R. Lince ◽  
Tsai C. Thomas ◽  
Williams R. Stanley
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Substrate Surface ◽  
Film Deposition ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Interface Roughening ◽  
Low Energy Electron ◽  
Electron Energy Loss

Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2 were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300°and 480°C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500°C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.

Interface roughening and domain growth in the dilute Ising model

1987 ◽  
Vol 35 (13) ◽  
pp. 6792-6795 ◽  
Author(s):  
Debashish Chowdhury ◽  
Martin Grant ◽  
J. D. Gunton
Keyword(s):  
Ising Model ◽  
Domain Growth ◽  
Dilute Ising Model ◽  
Interface Roughening
Sign in / Sign up

Export Citation Format

Share Document