Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low-pressure CH4and C2H2atmospheres

2004 ◽  
Vol 28 (2) ◽  
pp. 159-163 ◽  
Author(s):  
E. D'Anna ◽  
M. Fernández ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Zocco ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Titanium Carbide ◽  
Low Pressure ◽  
Silicon Wafers ◽  
Film Deposition ◽  
Krf Laser

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

scholarly journals Laser ablation and low-pressure helium-ICP-MS for the analysis of alumina powder dispersed in glycerol

2004 ◽  
Vol 53 (9) ◽  
pp. 993-996 ◽  
Author(s):  
Taketoshi NAGAYASU ◽  
Hideo HAYASHI ◽  
Masataka HIRAIDE
Keyword(s):  
Laser Ablation ◽  
Low Pressure ◽  
Alumina Powder ◽  
Icp Ms

SiO2 film deposition by XeCl laser ablation of fused silica

1995 ◽  
Vol 86 (1-4) ◽  
pp. 128-133 ◽  
Author(s):  
P. Baeri ◽  
R. Reitano ◽  
N. Marino
Keyword(s):  
Laser Ablation ◽  
Sio2 Film ◽  
Fused Silica ◽  
Film Deposition ◽  
Xecl Laser

Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation

1998 ◽  
Vol 66 (2) ◽  
pp. 183-187 ◽  
Author(s):  
M. Diegel ◽  
F. Falk ◽  
R. Hergt ◽  
H. Hobert ◽  
H. Stafast
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Surface ◽  
Surface Activation

Time evolution of laser-ablation plumes and induced shock waves in low-pressure gas

2017 ◽  
Vol 24 (6) ◽  
pp. 063520 ◽  
Author(s):  
Rimpei Chiba ◽  
Yuta Ishikawa ◽  
Jun Hasegawa ◽  
Kazuhiko Horioka
Keyword(s):  
Laser Ablation ◽  
Shock Waves ◽  
Time Evolution ◽  
Low Pressure
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