Radiation conductance of a slot covered with anisotropic plasma

1966 ◽  
Vol 113 (12) ◽  
pp. 1920
Author(s):  
Gilbert H. Owyang ◽  
S.R. Seshadri
Keyword(s):  
2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


Author(s):  
Tong He ◽  
Hui Ran Zeng ◽  
Li Na Hea ◽  
Kai Li
Keyword(s):  

Langmuir ◽  
2014 ◽  
Vol 30 (41) ◽  
pp. 12354-12361 ◽  
Author(s):  
Eser M. Akinoglu ◽  
Anthony J. Morfa ◽  
Michael Giersig

1983 ◽  
Vol 93 (2) ◽  
pp. 281-293 ◽  
Author(s):  
P. C. W. Fung ◽  
T. P. Kwan
Keyword(s):  

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