Mode-conversion loss in a sequential confocal lens system

A few years ago results on cryoprotection of L-valine were reported, where the values of the critical fluence De i.e, the electron exposure which decreases the intensity of the diffraction reflections by a factor e, amounted to the order of 2000 + 1000 e/nm2. In the meantime a discrepancy arose, since several groups published De values between 100 e/nm2 and 1200 e/nm2 /1 - 4/. This disagreement and particularly the wide spread of the results induced us to investigate more thoroughly the behaviour of organic crystals at very low temperatures during electron irradiation.For this purpose large L-valine crystals with homogenuous thickness were deposited on holey carbon films, thin carbon films or Au-coated holey carbon films. These specimens were cooled down to nearly liquid helium temperature in an electron microscope with a superconducting lens system and irradiated with 200 keU-electrons. The progress of radiation damage under different preparation conditions has been observed with series of electron diffraction patterns and direct images of extinction contours.

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Resolution in photoelectron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100086593 ◽

1991 ◽

Vol 49 ◽

pp. 458-459

Author(s):

G. F. Rempfer

Keyword(s):

Electron Microscopy ◽

Electric Field ◽

Ultraviolet Light ◽

Uniform Field ◽

Virtual Image ◽

Lens System ◽

Photoemission Electron Microscopy ◽

Planar Electrode ◽

Electron Lens ◽

Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

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Slow-Scan CCD Observation of Backscattering Patterns in SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131176 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1308-1309

Author(s):

F. Ouyang ◽

D. A. Ray ◽

O. L. Krivanek

Keyword(s):

Electron Beam ◽

Electron Microscope ◽

Scanning Electron Microscope ◽

Dynamic Range ◽

High Sensitivity ◽

Lens System ◽

Wide Dynamic Range ◽

Peltier Cooler ◽

Diffraction Patterns ◽

Scanning Electron

Electron backscattering Kikuchi diffraction patterns (BKDP) reveal useful information about the structure and orientation of crystals under study. With the well focused electron beam in a scanning electron microscope (SEM), one can use BKDP as a microanalysis tool. BKDPs have been recorded in SEMs using a phosphor screen coupled to an intensified TV camera through a lens system, and by photographic negatives. With the development of fiber-optically coupled slow scan CCD (SSC) cameras for electron beam imaging, one can take advantage of their high sensitivity and wide dynamic range for observing BKDP in SEM.We have used the Gatan 690 SSC camera to observe backscattering patterns in a JEOL JSM-840A SEM. The CCD sensor has an active area of 13.25 mm × 8.83 mm and 576 × 384 pixels. The camera head, which consists of a single crystal YAG scintillator fiber optically coupled to the CCD chip, is located inside the SEM specimen chamber. The whole camera head is cooled to about -30°C by a Peltier cooler, which permits long integration times (up to 100 seconds).

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Comparison of freeze-fractured yeast replicas using conventional TEM and low-voltage field-emission SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152343 ◽

1989 ◽

Vol 47 ◽

pp. 74-75

Author(s):

William P. Wergin ◽

Eric F. Erbe ◽

Terrence W. Reilly

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Field Emission ◽

Low Voltage ◽

Objective Lens ◽

Specimen Preparation ◽

Lens System ◽

Air Drying ◽

Preparation Techniques ◽

Scanning Electron

Although the first commercial scanning electron microscope (SEM) was introduced in 1965, the limited resolution and the lack of preparation techniques initially confined biological observations to relatively low magnification images showing anatomical surface features of samples that withstood the artifacts associated with air drying. As the design of instrumentation improved and the techniques for specimen preparation developed, the SEM allowed biologists to gain additional insights not only on the external features of samples but on the internal structure of tissues as well. By 1985, the resolution of the conventional SEM had reached 3 - 5 nm; however most biological samples still required a conductive coating of 20 - 30 nm that prevented investigators from approaching the level of information that was available with various TEM techniques. Recently, a new SEM design combined a condenser-objective lens system with a field emission electron source.

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Performance Evaluation of a Novel Type of Low-Energy Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100180525 ◽

1990 ◽

Vol 48 (1) ◽

pp. 354-355

Author(s):

Bertholdand Senftinger ◽

Helmut Liebl

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Field Strength ◽

Numerical Aperture ◽

Low Energy ◽

Energy Electron ◽

High Resolution Imaging ◽

Lens System ◽

Resolution Imaging ◽

Low Energy Electron

During the last few years the investigation of clean and adsorbate-covered solid surfaces as well as thin-film growth and molecular dynamics have given rise to a constant demand for high-resolution imaging microscopy with reflected and diffracted low energy electrons as well as photo-electrons. A recent successful implementation of a UHV low-energy electron microscope by Bauer and Telieps encouraged us to construct such a low energy electron microscope (LEEM) for high-resolution imaging incorporating several novel design features, which is described more detailed elsewhere.The constraint of high field strength at the surface required to keep the aberrations caused by the accelerating field small and high UV photon intensity to get an improved signal-to-noise ratio for photoemission led to the design of a tetrode emission lens system capable of also focusing the UV light at the surface through an integrated Schwarzschild-type objective. Fig. 1 shows an axial section of the emission lens in the LEEM with sample (28) and part of the sample holder (29). The integrated mirror objective (50a, 50b) is used for visual in situ microscopic observation of the sample as well as for UV illumination. The electron optical components and the sample with accelerating field followed by an einzel lens form a tetrode system. In order to keep the field strength high, the sample is separated from the first element of the einzel lens by only 1.6 mm. With a numerical aperture of 0.5 for the Schwarzschild objective the orifice in the first element of the einzel lens has to be about 3.0 mm in diameter. Considering the much smaller distance to the sample one can expect intense distortions of the accelerating field in front of the sample. Because the achievable lateral resolution depends mainly on the quality of the first imaging step, careful investigation of the aberrations caused by the emission lens system had to be done in order to avoid sacrificing high lateral resolution for larger numerical aperture.

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