Radiation mechanism of an open-circuit microstrip termination - fundamental design implications

2011 ◽  
pp. 42-66
Keyword(s):  
Open Circuit ◽  
Radiation Mechanism ◽  
Fundamental Design

Closed or open circuit during ex-vivo lung perfusion for reconditioning of damaged donor-lungs – which shall we use?

2010 ◽  
Vol 58 (S 01) ◽  
Author(s):  
S Wipper ◽  
Y von Rittberg ◽  
J Lindner ◽  
C Pahrmann ◽  
H Reichenspurner ◽  
...  
Keyword(s):  
Ex Vivo ◽  
Open Circuit ◽  
Lung Perfusion ◽  
Ex Vivo Lung Perfusion

Corrosion monitoring and root cause identification in high solids concentrators

TAPPI Journal ◽  
2016 ◽  
Vol 15 (7) ◽  
pp. 467-477
Author(s):  
PASI NIEMELAINEN ◽  
MARTTI PULLIAINEN ◽  
JARMO KAHALA ◽  
SAMPO LUUKKAINEN
Keyword(s):  
Paper Industry ◽  
Black Liquor ◽  
Construction Materials ◽  
Open Circuit ◽  
Process Conditions ◽  
Potential Range ◽  
Corrosion Monitoring ◽  
General Corrosion ◽  
High Solids ◽  
Passive Area

Black liquor high solids (about 80%) concentrators have often been found to suffer from aggressive corrosion. In particular, the first and second effect bodies are susceptible to corrosion attacks resulting in tube leaks and wall thinning, which limit the availability and lifetime of evaporator lines. Corrosion dynamics and construction materials have been studied extensively within the pulp and paper industry to understand the corrosion process. However, it has been challenging to identify root causes for corrosion, which has limited proactive measures to minimize corrosion damage. Corrosion of the first phase concentrator was studied by defining the potential regions for passive area, stress corrosion cracking, pitting corrosion, and general corrosion. This was achieved by using a technique called polarization scan that reveals ranges for the passive area in which the equipment is naturally protected against corrosion. The open circuit potential, also known as corrosion potential, and linear polarization resistance of the metal were monitored online, which allowed for definition of corrosion risks for stainless steel 304L and duplex stainless steels 2205 and SAF 2906. An online temperature measurement added insight to the analysis. A process diagnostics tool was used to identify root causes of the corrosion attacks. Many of the root causes were related to process conditions triggering corrosion. Once the metal surface was activated, it was difficult to repassivate the metal naturally unless a sufficient potential range was reached.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Equivalent Circuit Model ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial Increase ◽  
Soaking Time ◽  
Hydrogenated Silicon ◽  
Kinetics Of

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

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