GaAs MESFET Switched-Current Circuits

2011 ◽  
pp. 548-576 ◽  
Author(s):  
Chris Toumazou ◽  
Nicholas Battersby
Keyword(s):  
Gaas Mesfet ◽  
Switched Current

Improvement of Carrier Power to Third-Order Intermodulation Distortion Power Ratio for a Power Amplifier at 5.25 GHz using LINC Method

2018 ◽  
Vol 12 (1) ◽  
pp. 34-40
Author(s):  
Said Elkhaldi ◽  
Naima Amar Touhami ◽  
Mohamed Aghoutane ◽  
Taj-eddin Elhamadi
Keyword(s):  
Power Amplifier ◽  
Artificial Neural Network Model ◽  
Power Ratio ◽  
Linear Amplification ◽  
Third Order ◽  
Gaas Mesfet ◽  
Constant Envelope ◽  
Modulation Signal ◽  
Low Efficiency ◽  
Nonlinear Components

Introduction:This paper focuses on improving the power amplifier linearity for wireless communications. The use of a single branch of a power amplifier can produce high distortion with low efficiency.Method:In this paper, the Linear Amplification with Nonlinear Components (LINC) technique is used to improve the linearity and efficiency of the power amplifier. The LINC technique is based on converting the envelope modulation signal into two constant envelope phase-modulated baseband signals. After amplification and combining the resulting signals, the required linear output signal is obtained. To validate the proposed approach, LINC technique is used for linearizing an amplifier based on a GaAs MESFET (described by an artificial neural network Model).Conclusion:Good results have been achieved, and an improvement of about 40.80 dBc and 47.50 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz.

Ultra-thin-channelled GaAs MESFET with double-δ-doped layers

1988 ◽  
Vol 24 (16) ◽  
pp. 1034 ◽  
Author(s):  
A. Ishibashi ◽  
K. Funato ◽  
Y. Mori
Keyword(s):  
Gaas Mesfet

Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

1990 ◽  
Vol 26 (16) ◽  
pp. 1324
Author(s):  
I. Pollentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Strained Layer ◽  
Gaas Mesfet ◽  
Lift Off

State variable sinusoidal switched-current oscillator

1991 ◽  
Vol 27 (6) ◽  
pp. 489 ◽  
Author(s):  
A. Kobayashi ◽  
Y. Horio ◽  
S. Nakamura
Keyword(s):  
State Variable ◽  
Switched Current

IVA-5 through-AIN implantation for a high transconductance self-aligned GaAs MESFET

1983 ◽  
Vol 30 (11) ◽  
pp. 1589-1589
Author(s):  
H. Nishi ◽  
H. Onodera ◽  
H. Kawata ◽  
N. Yokoyama ◽  
A. Shibatomi
Keyword(s):  
Gaas Mesfet ◽  
High Transconductance

High-Speed Enhancement-Mode GaAs MESFET Logic

1980 ◽  
Vol 28 (5) ◽  
pp. 479-483 ◽  
Author(s):  
T. Mizutani ◽  
N. Kato ◽  
M. Ida ◽  
M. Ohmori
Keyword(s):  
High Speed ◽  
Enhancement Mode ◽  
Gaas Mesfet
Sign in / Sign up

Export Citation Format

Share Document