Effect of stamp design on residual layer thickness and contact pressure in UV nanoimprint lithography

2018 ◽  
Vol 13 (6) ◽  
pp. 887-891 ◽  
Author(s):  
Minqi Yin ◽  
Hongwen Sun ◽  
Haibin Wang
Keyword(s):  
Layer Thickness ◽  
Contact Pressure ◽  
Nanoimprint Lithography ◽  
Residual Layer

The Effect of Substrate Deformation in UV-Nanoimprint Lithography Using a Large Area Stamp

2007 ◽  
Vol 121-123 ◽  
pp. 649-652
Author(s):  
Ki Don Kim ◽  
Young Suk Sim ◽  
Jun Ho Jeong ◽  
Hyun Kee Sohn ◽  
Eung Sug Lee ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Layer Thickness ◽  
Nanoimprint Lithography ◽  
Residual Layer ◽  
Simplified Model ◽  
Large Area ◽  
Severe Deformation ◽  
Element Method

We investigated the non-uniformity of the residual layer thickness caused by wafer deformation in an experiment that examined different wafer thicknesses using UV-NIL with an element-wise patterned stamp (EPS). Experiments using the EPS were performed on an EVG®620-NIL. Severe deformation of the wafer served as an obstacle to the spread of resin drops, which caused non-uniformity of the residual layer thickness. We also simulated the imprint process using a simplified model and finite element method to analyze the non-uniformity.

scholarly journals UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 822
Author(s):  
Christine Thanner ◽  
Martin Eibelhuber
Keyword(s):  
Layer Thickness ◽  
Process Parameters ◽  
Nanoimprint Lithography ◽  
Failure Modes ◽  
Production Method ◽  
Efficient Production ◽  
Comprehensive Overview ◽  
Replication Method ◽  
Wide Range ◽  
Pattern Size

Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness.

Challenges of residual layer minimisation in thermal nanoimprint lithography

2007 ◽  
Author(s):  
Nicolas Bogdanski ◽  
Matthias Wissen ◽  
Saskia Möllenbeck ◽  
Hella-Christin Scheer
Keyword(s):  
Nanoimprint Lithography ◽  
Residual Layer
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