High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering

2016 ◽  
Vol 11 (6) ◽  
pp. 319-322 ◽  
Author(s):  
Kaushal Nigam ◽  
Pravin Kondekar ◽  
Dheeraj Sharma
Keyword(s):  
Work Function ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Dual Metal ◽  
High Frequency Performance

scholarly journals Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor

2020 ◽  
Author(s):  
Tianyu Yu ◽  
Liang Dai ◽  
Zhifeng Zhao ◽  
Weifeng Lyu ◽  
Mi Lin
Keyword(s):  
Work Function ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Gate ◽  
Statistical Fluctuations ◽  
Effect Transistor ◽  
Dual Metal ◽  
Aided Design ◽  
The Impact

The impact of work-function variation (WFV) on performance of an inversion-mode (IM) dual-metal gate (DMG) fin field-effect transistor (FinFET) was investigated for the first time. The statistical fluctuations induced by WFV on the threshold-voltage (VTH), transconductance (gm), and subthreshold slope (SS) were demonstrated and estimated utilizing a 3D technology computer-aided design (TCAD) simulator. We found that the performance variations of the DMG FinFET were affected by two different metals near the drain and near the source, respectively. Additionally, this effect of the two metals on the channel was not monotonic with the length of the channel of their own control. Our work fills a gap in the study of WFV for a DMG IM FinFET and provides a reference for optimizing the distribution of the two metals.

High Frequency Performance of Diamond Field-Effect Transistor

2001 ◽  
Author(s):  
Hirotada Taniuchi ◽  
Hitoshi Umezawa ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hiroshi Kawarada
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Frequency Performance

scholarly journals Impact of band to band Tunneling on Transient performance of Dual Gate Tunnel Field Effect Transistor (TFET)

2019 ◽  
Vol 8 (9) ◽  
pp. 284-288
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuit ◽  
Voltage Range ◽  
Metal Work Function ◽  
Band To Band Tunneling ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Metal Work

Tunnel Field Effect Transistor (TFET) is gated reverse biased P-I-N diode structured semiconductor device and can be considered as a reliable low power device. TCAD (Sentaurus 2D) simulations for various Gate metal work function (4.1-4.3 eV) shows that its ON-current (ION) arises from quantum mechanical band-to-band tunneling (B2BT) and observed that threshold Voltage (VT) for TFET decreases with increase in Gate metal work function. The thermionic emission of electrons in MOSFET limits the sub-threshold swing (SS) by 60 mV/dec whereas TFET has potential for low SS ie. SS<60 mV/dec. TCAD Simulations confirmed that that the Gate – Drain capacitance (Cgd) strongly follows the Gate capacitance (Cgg) all over the voltage range (0-0.9V) which increases the miller capacitance for TFET. It is investigated that for TFET, the injection of carriers into the channel is through B2BT which effectively couples the Gate charge to the Drain. A look up table based Verilog-A model is generated for TFET and used to simulate the static and dynamic behavior of TFET based digital circuit in Cadence spectre. Miller effect causes the peak voltage overshoots are noticed at the drain side during transient responses and can be responsible for dynamic power loss and high turn ON/OFF delay

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