SnS nanostructures prepared by simple film technique: catalyst‐free vacuum thermal evaporation

2014 ◽  
Vol 9 (1) ◽  
pp. 34-36
Author(s):  
Jin Li ◽  
Shengfeng Wang ◽  
Jikang Jian ◽  
Yanfei Sun ◽  
Jinbao Xu
Keyword(s):  
Thermal Evaporation ◽  
Vacuum Thermal Evaporation ◽  
Catalyst Free ◽  
Simple Film

Magnetic τ-MnAlC thin film fabrication by high-vacuum thermal evaporation

2021 ◽  
pp. 129657
Author(s):  
J.D. Gamez ◽  
H. Martínez-Sánchez ◽  
J.L. Valenzuela ◽  
L. Marín ◽  
L.A. Rodríguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Evaporation ◽  
High Vacuum ◽  
Thin Film Fabrication ◽  
Vacuum Thermal Evaporation ◽  
Film Fabrication

Formation of gold and silver cluster arrays using vacuum-thermal evaporation on a non-heated substrate

2014 ◽  
Author(s):  
D. G. Gromov ◽  
A. I. Savitskiy ◽  
L. M. Pavlova ◽  
N. I. Borgardt ◽  
Y. S. Grishina ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Silver Cluster ◽  
Vacuum Thermal Evaporation ◽  
Heated Substrate

Thermal evaporation synthesis of SiC/SiOx nanochain heterojunctions and their photoluminescence properties

2014 ◽  
Vol 2 (37) ◽  
pp. 7761-7767 ◽  
Author(s):  
Haitao Liu ◽  
Zhaohui Huang ◽  
Juntong Huang ◽  
Minghao Fang ◽  
Yan-gai Liu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Thermal Evaporation ◽  
Chemical Vapour ◽  
Deposition Method ◽  
Photoluminescence Properties ◽  
Catalyst Free ◽  
Chemical Vapour Deposition Method

Chainlike SiC/SiOx heterojunctions were prepared on a silicon wafer by a simplified catalyst-free thermal chemical vapour deposition method.

Laser-Induced Phase Transitions in Vitreous Se Films Obtained by Vacuum-Thermal Evaporation

2018 ◽  
Vol 44 (9) ◽  
pp. 797-800 ◽  
Author(s):  
E. V. Aleksandrovich ◽  
E. V. Stepanova ◽  
K. G. Mikheev ◽  
G. M. Mikheev
Keyword(s):  
Phase Transitions ◽  
Thermal Evaporation ◽  
Vacuum Thermal Evaporation

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

2021 ◽  
Vol 1039 ◽  
pp. 398-405
Author(s):  
Munira M.J. Al-Haji ◽  
Raad M.S. Al-Haddad
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Evaporation ◽  
Source Material ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Melt Quenching ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Scanning Electron

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.

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