Small‐sized silicon‐on‐insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

2013 ◽  
Vol 8 (7) ◽  
pp. 386-389 ◽  
Author(s):  
Qiang Fu ◽  
Bo Zhang ◽  
Xiaorong Luo ◽  
Zhigang Wang ◽  
Zhaoji Li
Keyword(s):  
Forward Bias ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor ◽  
Safe Operating

scholarly journals A Simplified Spice Model for IGBT

1998 ◽  
Vol 21 (4) ◽  
pp. 279-292 ◽  
Author(s):  
A. Haddi ◽  
A. Maouad ◽  
O. Elmazria ◽  
A. Hoffmann ◽  
J. P. Charles
Keyword(s):  
Equivalent Circuit ◽  
Bipolar Transistor ◽  
Experimental Results ◽  
Insulated Gate Bipolar Transistor ◽  
Spice Model ◽  
Safe Operating ◽  
Good Agreement ◽  
Latch Up

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

2013 ◽  
Vol 22 (2) ◽  
pp. 027303 ◽  
Author(s):  
Xiao-Rong Luo ◽  
Qi Wang ◽  
Guo-Liang Yao ◽  
Yuan-Gang Wang ◽  
Tian-Fei Lei ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor

A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with thep+Cathode Well

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 854-859 ◽  
Author(s):  
Byeong-Hoon Lee ◽  
Chong-Man Yun ◽  
Dae-Seok Byeon ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor

New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator

2002 ◽  
Vol 40 (4) ◽  
pp. 645 ◽  
Author(s):  
Choi Woo-Beom ◽  
Sung Woong-Je ◽  
Park Chun-Il ◽  
Kim Sangsig ◽  
Sung Man Young
Keyword(s):  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor
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