Direct energy gap of Sb2Te3 synthesised by solid-state microwave plasma

2011 ◽  
Vol 6 (3) ◽  
pp. 170 ◽  
Author(s):  
T. Suriwong ◽  
T. Thongtem ◽  
S. Thongtem
Keyword(s):  
Solid State ◽  
Microwave Plasma ◽  
Energy Gap ◽  
Direct Energy ◽  
Direct Energy Gap

Photoemission and Energy Gap of CdS Synthesized by Solid State Microwave-Plasma

2011 ◽  
Vol 695 ◽  
pp. 17-20
Author(s):  
Wonchai Promnopas ◽  
Titipun Thongtem ◽  
Somchai Thongtem
Keyword(s):  
Solid State ◽  
Cadmium Sulfide ◽  
Microwave Plasma ◽  
Energy Gap ◽  
Molar Ratio ◽  
Direct Energy ◽  
Direct Energy Gap

Purified cadmium sulfide crystals were successfully synthesized from 1:2 molar ratio of Cd and S powders by a 900 W microwave plasma for 120 min and 140 min. In the present research, XRD and SAED patterns including SEM, TEM, and FIB images were used to indicate phase and morphology of the products, with their Raman peaks at 303 and 605 cm-1. Photoemission was determined to be 537 nm, and direct energy gap (Eg) to be 2.48-2.51 eV.

A Theoretical Study on the Pressure Dependence of the Band Gap in ${\rm A^{I}B^{III}C^{VI}_2}$ Compounds

1997 ◽  
Vol 11 (16) ◽  
pp. 1959-1967 ◽  
Author(s):  
R. Asokamani ◽  
R. Mercy Amirthakumari ◽  
G. Pari
Keyword(s):  
Theoretical Study ◽  
Energy Gap ◽  
Ambient Pressure ◽  
Chalcopyrite Structure ◽  
Deformation Potential ◽  
Equilibrium Lattice Constant ◽  
Self Consistent ◽  
Direct Energy ◽  
Experimental Values ◽  
Direct Energy Gap

The self-consistent scalar relativistic band structure for AgGaX 2 (X = S, Se, Te) performed in chalcopyrite structure using the TBLMTO method at various pressures are reported here. Empty spheres were introduced in the calculations as the chalcopyrite structure is loosely packed. From the total energy calculations, the equilibrium lattice constant and the bulk modulus at zero pressure were calculated and these values agree well with the reported experimental values. All these compounds are found to have direct energy gap at ambient pressure with the gap widening with increased pressures which are in agreement with the experimental results. The deformation potential, dE g /dP for the compounds are also reported here. The metallisation volumes are calculated and the possibility of observing superconductivity in these compounds is discussed.

Dependence of the direct energy gap of GaP on hydrostatic pressure

1985 ◽  
Vol 55 (4) ◽  
pp. 327-331 ◽  
Author(s):  
S. Ves ◽  
K. Strössner ◽  
Chul Koo Kim ◽  
Manuel Cardona
Keyword(s):  
Hydrostatic Pressure ◽  
Energy Gap ◽  
Direct Energy ◽  
Direct Energy Gap

scholarly journals Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

2018 ◽  
Vol 1003 ◽  
pp. 012105
Author(s):  
Nidhal M. Abdul-Ameer ◽  
Moafak C. Abdulrida ◽  
Shatha M. Abdul-Hakeem
Keyword(s):  
Energy Gap ◽  
Photoluminescence Spectra ◽  
Direct Energy ◽  
Direct Energy Gap

Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in SnxSi1−x /Si and SnxGe1−x/Ge Alloy Systems

1999 ◽  
Vol 583 ◽  
Author(s):  
Harry A. Atwater ◽  
Regina Ragan ◽  
Kyu S. Min
Keyword(s):  
Quantum Dots ◽  
Phase Separation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Energy Gap ◽  
Group Iv ◽  
Semiconductor Alloys ◽  
Group Iv Semiconductor ◽  
Direct Energy ◽  
Direct Energy Gap

AbstractThe narrow gap semiconductor alloys SnxGe1−x, and SnxSi1−x offer the possibility for engineering tunable direct energy gap Group IV semiconductor materials. For pseudomorphic SnxGe1−x, alloys grown on Ge (001) by molecular beam epitaxy, an indirect-to-direct bandgap transition with increasing Sn composition is observed, and the effects of misfit on the bandgap analyzed in terms of a deformation potential model. Key results are that pseudomorphic strain has only a very slight effect on the energy gap of SnxGe1−x, alloys grown on Ge (001) but for SnxGe1−x alloys grown on Ge (111) no indirect-to-direct gap transition is expected. In the SnxSi1−x system, ultrathin pseudomorphic epitaxially-stabilized α-SnxSi1−x alloys are grown on Si (001) substrates by conventional molecular beam epitaxy. Coherently strained oa-Sn quantum dots are formed within a defect-free Si (001) crystal by phase separation of the thin SnxSi1−x layers embedded in Si (001). Phase separation of the thin alloy film, and subsequent evolution occurs via growth and coarsening of regularly-shaped α-Sn quantum dots that appear as 4–6 nm diameter tetrakaidecahedra with facets oriented along elastically soft [100] directions. Attenuated total reflectance infrared absorption measurements indicate an absorption feature due to the α-Sn quantum dot array with onset at ˜0.3 eV and absorption strength of 8 × 103 cm−1, which are consistent with direct interband transitions.

Direct-energy-gap dependence on Al concentration inAlxGa1−xAs

1988 ◽  
Vol 38 (5) ◽  
pp. 3263-3268 ◽  
Author(s):  
C. Bosio ◽  
J. L. Staehli ◽  
M. Guzzi ◽  
G. Burri ◽  
R. A. Logan
Keyword(s):  
Energy Gap ◽  
Direct Energy ◽  
Direct Energy Gap
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