scholarly journals Analysis on structural parameters and electrical performance of dc deep well grounding electrode

2019 ◽  
Vol 2019 (16) ◽  
pp. 2366-2370 ◽  
Author(s):  
Yun Teng ◽  
Xishan Wen ◽  
Hansheng Cai ◽  
Lei Jia ◽  
Gang Liu ◽  
...  
Keyword(s):  
Structural Parameters ◽  
Electrical Performance ◽  
Deep Well ◽  
Grounding Electrode

scholarly journals Numerical Investigation on the Electrical Performance Optimization of a Tubular Thermoelectric Generator for Waste Heat Recovery

2021 ◽  
Vol 321 ◽  
pp. 02003
Author(s):  
Leisheng Chen ◽  
Zuyi Yu ◽  
Jingwen Zhang ◽  
Jaeyoung Lee
Keyword(s):  
Tilt Angle ◽  
Performance Optimization ◽  
Thermoelectric Generator ◽  
Waste Heat ◽  
Structural Parameters ◽  
Electrical Power ◽  
Open Circuit ◽  
Relative Content ◽  
Electrical Performance ◽  
Tubular Thermoelectric Generator

In the waste heat utilization of automobile exhaust, the tubular thermoelectric generator (TTEG) has structural advantages compared with the flat-plate thermoelectric generator. A kind of TTEG that is composed of Bi0.5Sb1.5Te3 and Ni conical rings alternately attracts researchers' attention, and it generates electrical power based on the transverse thermoelectric effect. However, the electrical performance of such TTEG still needs to be improved for industrial utilization. In this study, the performance of TTEG was optimized through numerical simulation by changing its related structural parameters, including the tilt angle, the thickness of the conical ring, and the relative content of Ni. It is confirmed that the optimal tilt angle with maximum open-circuit voltage (OCV) is 27.3°; on this basis, it is found that a thinner thickness corresponds to a larger OCV; furthermore, when using a conical rings’ thickness of 0.75 mm and increasing the relative content of Ni in the Bi0.5Sb1.5Te3/Ni layered pair from 10% to 90%, the OCV decreases from 198mV to 105mV while the power density increases from 413W/m2 to 1350W/m2. It is believed that these findings can help to develop TTEGs with better electrical performance.

Fabrication and Performance Limits of Sub-0.1 µm Cu Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
T. S. Kuan ◽  
C. K. Inoki ◽  
G. S. Oehrlein ◽  
K. Rose ◽  
Y. –P. Zhao ◽  
...  
Keyword(s):  
Size Effect ◽  
Structural Parameters ◽  
Chemical Mechanical Planarization ◽  
Interface Roughness ◽  
Electrical Performance ◽  
Performance Limits ◽  
Cross Sectional ◽  
Cu Films ◽  
And Performance ◽  
On Chip

AbstractAs the on-chip interconnect linewidth and film thickness shrink below 0.1 µm, the size effect on Cu resistivity becomes important, and the electrical performance deliverable by such narrow metal lines needs to be assessed critically. From the fabrication viewpoint, it is also crucial to determine how structural parameters affect resistivity in the sub-0.1 µm feature size regime. To evaluate the scaling of resistivity with thickness, we have fabricated a series of Ta/Cu/Ta/SiO2 thin film structures with Cu thickness ranging from 1 µm to 0.02 µm. These test structures revealed a far larger (∼2.3 ×) size effect than that expected from surface scattering. We have also fabricated test structures containing 50-nm-wide Cu lines wrapped in Ta-based liners and embedded in insulating SiO2 using e-beam lithography, high-density plasma etching, ionized PVD Cu deposition, and chemical-mechanical planarization processes. Direct current (16 nA) resistance measurements from these 50-nm-wide Cu lines have also shown a higher- than-expected distribution of resistivity. Cross-sectional TEM and surface AFM observations suggest that the observed extra resistivity increase can be attributed to small grain sizes in ultra- thin Cu films and to Cu/Ta interface roughness. Monte Carlo simulations are used to quantify the extra resistivity resulting from interface roughness.

scholarly journals Research on Earth Resistivity Measuring and Modeling of HVDC Deep-Well Grounding Electrode Sites

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 23776-23786 ◽  
Author(s):  
Maoheng Jing ◽  
Xishan Wen ◽  
Hansheng Cai ◽  
Yun Teng ◽  
Shangmao Hu ◽  
...  
Keyword(s):  
Earth Resistivity ◽  
Deep Well ◽  
Grounding Electrode

scholarly journals Novel Grounding Electrode Model with Axial Construction Space Consideration

Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4765
Author(s):  
Yihua Dan ◽  
Zhanlong Zhang ◽  
Yiqiao Li ◽  
Jun Deng ◽  
Jing Zou
Keyword(s):  
Structural Parameters ◽  
Electrical Potential ◽  
Calculation Model ◽  
Maintenance Cost ◽  
Grounding Resistance ◽  
Additional Resistance ◽  
Grounding Electrode ◽  
Touch Voltage ◽  
Operation And Maintenance Cost ◽  
Electrical Apparatus

Grounding electrodes are used to ensure safe operation of electrical apparatus. The limited axial construction space for grounding electrodes is a significant constraining factor. Grounding performance will attenuate rapidly under the influence of the reduced length of horizontal or vertical grounding electrodes. However, if additional resistance-reducing measures are adopted, the operation and maintenance cost of grounding electrodes will considerably increase. To solve above problem, this study proposed a novel grounding model that uses a helical grounding electrode to improve grounding performance within limited axial construction space. Firstly, a calculation model of finite element methods (FEM) is built based on the concept of increasing the contact area between the grounding electrodes and the soil. Grounding performance parameters of helical grounding electrodes, grounding resistance, electrical potential rise (EPR) distribution and maximum touch voltage, are analyzed. At the same time, structural parameters and buried depth for the helical grounding electrodes are studied and the optimal design criteria for the parameters are given. Results show that the helical grounding electrode exhibits better grounding performance in a limited axial construction area.

Azimuthally periodic wedge-shaped metal vane loaded circular ring frequency selective surface

2014 ◽  
Vol 7 (1) ◽  
pp. 95-106 ◽  
Author(s):  
Garima Bharti ◽  
Kumud Ranjan Jha ◽  
Ghanshyam Singh ◽  
Rajeev Jyoti
Keyword(s):  
Satellite Communication ◽  
Structural Parameters ◽  
Frequency Selective Surface ◽  
Circular Ring ◽  
Electrical Performance ◽  
Electromagnetic Spectrum ◽  
Method Of Moment ◽  
Reflection And Transmission ◽  
Synthesis Technique ◽  
Frequency Selective

In this paper, the analysis and simulation of a novel geometrical structure of the frequency selective surface (FSS), which has been achieved through the conductive loading of the simple circular ring with wedge-shaped metal vanes has been discussed. The electrical performance and behavior of the proposed structure have been studied in Ku band (12–18 GHz) of the electromagnetic spectrum for satellite communication. We have radially optimized the proposed structure to enhance the performance, such as reflection and transmission bandwidth. We have also discussed the effect of incident electric field at 0°, 10°, 30°, and 50° on the electrical performance of the proposed FSS. In addition to this, the effect of angular sensitivity on the proposed structure through increasing the number of conductive loaded wedge-shaped metal vanes is also explored. However, the structural parameters of the proposed FSS have been obtained through the synthesis technique. The analytical results obtained from the synthesis technique have been supported by the simulation results achieved through CST Microwave Studio as well as Ansoft high frequency structural simulator (HFSS), which are commercially available simulators based on the finite integral and finite-element technique, respectively. Furthermore, for validation of the numerical results, the Ansoft circuit simulator which is based on mixed potential integral equations (MPIE) and solved by the method-of-moment has also been used to obtain the reflection and transmission parameters through the values of inductance and capacitance, which have been achieved by the numerical analysis.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Optimal design of a high homogeneous and small-size shim coil for atomic spin gyroscope based on 0-1 linear programming

2020 ◽  
Vol 64 (1-4) ◽  
pp. 165-172
Author(s):  
Dongge Deng ◽  
Mingzhi Zhu ◽  
Qiang Shu ◽  
Baoxu Wang ◽  
Fei Yang
Keyword(s):  
Linear Programming ◽  
Power Consumption ◽  
Low Power ◽  
Optimization Design ◽  
Structural Parameters ◽  
Axial Position ◽  
Low Power Consumption ◽  
Optimal Method ◽  
Atomic Spin ◽  
Shim Coil

It is necessary to develop a high homogeneous, low power consumption, high frequency and small-size shim coil for high precision and low-cost atomic spin gyroscope (ASG). To provide the shim coil, a multi-objective optimization design method is proposed. All structural parameters including the wire diameter are optimized. In addition to the homogeneity, the size of optimized coil, especially the axial position and winding number, is restricted to develop the small-size shim coil with low power consumption. The 0-1 linear programming is adopted in the optimal model to conveniently describe winding distributions. The branch and bound algorithm is used to solve this model. Theoretical optimization results show that the homogeneity of the optimized shim coil is several orders of magnitudes better than the same-size solenoid. A simulation experiment is also conducted. Experimental results show that optimization results are verified, and power consumption of the optimized coil is about half of the solenoid when providing the same uniform magnetic field. This indicates that the proposed optimal method is feasible to develop shim coil for ASG.

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