High-efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength

2003 ◽  
Vol 150 (2) ◽  
pp. 110-114 ◽  
Author(s):  
A. Knigge ◽  
G. Tränkle ◽  
M. Zorn ◽  
H. Wenzel ◽  
J. Sebastian ◽  
...  
Keyword(s):  
High Efficiency ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Small oxide‐free vertical‐cavity surface‐emitting lasers with high efficiency and high power

2014 ◽  
Vol 50 (24) ◽  
pp. 1864-1866 ◽  
Author(s):  
Xu Yang ◽  
Ming Xin Li ◽  
Guowei Zhao ◽  
Sabine Freisem ◽  
Dennis G. Deppe
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers

2001 ◽  
Vol 37 (20) ◽  
pp. 1222 ◽  
Author(s):  
A. Knigge ◽  
M. Zorn ◽  
H. Wenzel ◽  
M. Weyers ◽  
G. Tränkle
Keyword(s):  
High Efficiency ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals High efficiency AlGaInP-based 660–680 nm vertical-cavity surface emitting lasers

1995 ◽  
Vol 31 (3) ◽  
pp. 196-198 ◽  
Author(s):  
M. Hagerott Crawford ◽  
K.D. Choquette ◽  
S.P. Kilcoyne ◽  
R.P. Schneider ◽  
K.L. Lear ◽  
...  
Keyword(s):  
High Efficiency ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

2019 ◽  
Vol 9 (3) ◽  
pp. 416 ◽  
Author(s):  
Masaru Kuramoto ◽  
Seiichiro Kobayashi ◽  
Takanobu Akagi ◽  
Komei Tazawa ◽  
Kazufumi Tanaka ◽  
...  
Keyword(s):  
Output Power ◽  
High Efficiency ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Mirror Reflectivity ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO2 lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.

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