Amplified spontaneous emission and threshold crossing in a distributed-Bragg reflector grating-coupled surface-emitting laser

2001 ◽  
Vol 148 (1) ◽  
pp. 25-30 ◽  
Author(s):  
Y. Boucher ◽  
O. Dellea
Keyword(s):  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Threshold Crossing ◽  
Surface Emitting Laser

Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure

1990 ◽  
Vol 26 (1) ◽  
pp. 18-19 ◽  
Author(s):  
M. Ogura ◽  
S. Mukai ◽  
M. Shimada ◽  
T. Asaka ◽  
Y. Yamasaki ◽  
...  
Keyword(s):  
Laser Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Surface Emitting Laser ◽  
Buried Heterostructure

scholarly journals Semiconductor Laser Linewidth Theory Revisited

2021 ◽  
Vol 11 (13) ◽  
pp. 6004
Author(s):  
Hans Wenzel ◽  
Markus Kantner ◽  
Mindaugas Radziunas ◽  
Uwe Bandelow
Keyword(s):  
Spontaneous Emission ◽  
Numerical Study ◽  
Analytical Formula ◽  
Reduction Factor ◽  
Bragg Reflector ◽  
Hole Burning ◽  
Distributed Bragg Reflector ◽  
Theoretical Understanding ◽  
Longitudinal Modes ◽  
Coupled Wave Equations

More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective α-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion, and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to surface emitting laser diodes

2010 ◽  
Vol 150 (39-40) ◽  
pp. 1955-1958 ◽  
Author(s):  
N.K. Cho ◽  
K.W. Kim ◽  
J.D. Song ◽  
W.J. Choi ◽  
J.I. Lee
Keyword(s):  
Laser Diodes ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Digital Alloy ◽  
Surface Emitting Laser

Monolithic 1.55μm Surface Emitting Laser Structure With In0.53Al0.14Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown by Meatalorganic Chemical Vapor Deposition Method

1997 ◽  
Vol 484 ◽  
Author(s):  
J.-H. Baek ◽  
B. Lee ◽  
W. S. Han ◽  
J. M. Smith ◽  
B. S. Jeong ◽  
...  
Keyword(s):  
Active Layer ◽  
Reflectance Spectrum ◽  
Chemical Vapor ◽  
Bragg Reflector ◽  
Flat Band ◽  
Chemical Vapor Deposition Method ◽  
Distributed Bragg Reflector ◽  
Surface Emitting Laser ◽  
Single Cavity

AbstractVertical cavity surface emitting laser (VCSEL) structure designed at 1.55 μm was grown by low pressure metalorganic chemical vapor deposition method. The VCSEL structure contains top and bottom distributed Bragg reflector (DBR) and single cavity active layer. The DBR was grown with In0.53Al0.14Ga0.33As and In0.52Al0.48As quarter lambda wavelength layer, alternatively. The growth temperature was as high as 750°C to prevent ordering and phase separation of the In0 52Al0.48As layer. The In0.52Al0.48As buffer layer was subsequently grown on the InP buffer layer in order to make an abrupt uniform interface. Unity reflectance was achieved at the center of 1.55 μm with 35.5 pairs undoped DBR layer. The reflectance spectrum of undoped DBR showed a wide flat-band region (greater than 50 nm) where the reflectivity was more than 99.5 %. The center wavelength of DBR was previously determined by an in-situ laser reflectometry technique during the growth of the whole structure. An infrared laser operating at 1.53 μm, which was the design wavelength of DBR layer was used as an in-situ measuring tool. The In0.53Ga0.47As multiple quantum well was used as a cavity layer. The reflectance spectrum of VCSEL structure, which included a single cavity active layer, showed excellent square shaped stop band and also showed an absorption region at the center of the flat band.

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