Auger recombination in strained quantum well InAlAsSb/GaSb structures for 3–4 µm lasers

1997 ◽  
Vol 144 (5) ◽  
pp. 336-342 ◽  
Author(s):  
A.D. Andreev ◽  
G.G. Zegrya
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Strained Quantum Well

Suppression of Auger recombination effects in compressively strained quantum-well lasers

1993 ◽  
Vol 29 (6) ◽  
pp. 1544-1552 ◽  
Author(s):  
W.W. Lui ◽  
T. Yamanaka ◽  
Y. Yoshikuni ◽  
K. Yokoyama ◽  
S. Seki
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector

1999 ◽  
Author(s):  
Serguei Jourba ◽  
Marie-Paule Besland ◽  
Michel Gendry ◽  
Michel Garrigues ◽  
Jean Louis Leclercq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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