Recent datareviews from EMIS. Resistivity of n-type and p-type crystalline silicon, doping dependence

1985 ◽  
Vol 132 (4) ◽  
pp. 195
Author(s):  
M. Pawlik
Keyword(s):  
Crystalline Silicon ◽  
Silicon Doping ◽  
Doping Dependence ◽  
P Type

New insights on LeTID/BO-LID in p-type mono-crystalline silicon

2021 ◽  
Vol 226 ◽  
pp. 111085
Author(s):  
Dehang Lin ◽  
Zechen Hu ◽  
Qiyuan He ◽  
Deren Yang ◽  
Lihui Song ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
P Type

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

2010 ◽  
Vol 25 (5) ◽  
pp. 055009 ◽  
Author(s):  
F E Rougieux ◽  
D Macdonald ◽  
K R McIntosh ◽  
A Cuevas
Keyword(s):  
Crystalline Silicon ◽  
Inversion Layer ◽  
P Type

scholarly journals Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N

2004 ◽  
Vol 85 (20) ◽  
pp. 4669-4671 ◽  
Author(s):  
K. Zhu ◽  
M. L. Nakarmi ◽  
K. H. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Silicon Doping ◽  
Doping Dependence

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

TEM Characterization of Arsenic and Phosphorus Implanted Silicon Devices

1997 ◽  
Vol 3 (S2) ◽  
pp. 467-468
Author(s):  
Lancy Tsung ◽  
Hun-Lian Tsai ◽  
Alwin Tsao ◽  
Makoto Takemura
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Source Region ◽  
Amorphous Layer ◽  
Common Source ◽  
Silicon Devices ◽  
Similar Region ◽  
Before And After ◽  
P Type ◽  
Silicon Device

Ion implantation of arsenic and phosphorus is a common practice in silicon devices for the formation of transistor source/drain regions. We used a TEM equipped with EDX capabilities to investigate effects of ion implantation in actual devices before and after annealing. A 200 kev field emission gun TEM was used in this study. Two implant cases were studied here. Both samples are p-type, (100) Si wafers.Figure 1 shows the microstructure in a common source region of a silicon device after being implanted by phosphorus (4x1014 cm−2 at 30 kv, 0°), while Figure 2 shows a similar region for arsenic implantation (5x1015 cm−2 at 45 kv, 0°). No screen layer was used during implantation. The phosphorus implant results in a ˜0.05 μm amorphous layer sandwiched between heavily damaged crystalline silicon. High resolution images reveal a rough amorphous/damaged crystalline boundary and high density defects due to silicon lattice displacements.

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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