5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

2008 ◽  
Vol 2 (1) ◽  
pp. 19-22 ◽  
Author(s):  
M.A. Morton ◽  
J.D. Cressler ◽  
J.P. Comeau ◽  
J. Papapolymerou ◽  
M. Mitchell
Keyword(s):  
Phase Shifter ◽  
X Band ◽  
Low Pass ◽  
Silicon Based ◽  
High Pass

High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications

2018 ◽  
Vol 35 (2) ◽  
pp. 92-96
Author(s):  
Pengpeng Sun ◽  
Hui Liu ◽  
Miao Geng ◽  
Rong Zhang ◽  
Tingting Yuan ◽  
...  
Keyword(s):  
High Power ◽  
Phase Shifter ◽  
X Band ◽  
Low Pass ◽  
High Pass

Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters

2006 ◽  
Vol 54 (12) ◽  
pp. 4032-4040 ◽  
Author(s):  
Matthew A. Morton ◽  
Jonathan P. Comeau ◽  
John D. Cressler ◽  
Mark Mitchell ◽  
John Papapolymerou
Keyword(s):  
Phase Error ◽  
Phase Shifters ◽  
Design Considerations ◽  
Low Pass ◽  
Silicon Based ◽  
High Pass

A Highly Integrated 1-Bit Phase Shifter Based on High-Pass/Low-Pass Structure

2015 ◽  
Vol 25 (8) ◽  
pp. 523-525 ◽  
Author(s):  
In Sang Song ◽  
Giwan Yoon ◽  
Chul Soon Park
Keyword(s):  
Phase Shifter ◽  
Low Pass ◽  
High Pass

scholarly journals Passive Reciprocal high-pass/low-pass 4-bit phase shifter at 2.45 GHz

2014 ◽  
Author(s):  
M. T. Qureshi ◽  
V. Desmaris ◽  
M. Geurts ◽  
J. van de Sluis
Keyword(s):  
Phase Shifter ◽  
Low Pass ◽  
High Pass

Design of Phase Shifters with Ladder Stubs Via Real Frequency Technique

2020 ◽  
pp. 2150112
Author(s):  
Metin Şengül
Keyword(s):  
Phase Shifter ◽  
Characteristic Impedance ◽  
Limited Range ◽  
Phase Shifters ◽  
New Approach ◽  
High Frequencies ◽  
Low Pass ◽  
Lumped Elements ◽  
Section Type ◽  
High Pass

Generally at high frequencies, lumped-elements are not preferred because of their limited range of values. Therefore, in this work, a kind of phase shifter formed with ladder stubs is studied and a new approach to design phase shifter’s low pass and high pass sections which are composed of series or shunt connected open-ended or short-ended stubs is proposed. In the approach, since the main focus is to form low pass and high pass two-port sections, switching process is not considered. First, the designer selects the section type and the total number of stubs in the sections; it is not necessary to fix the two-port section topologies and not necessary to derive the characteristic impedance and delay expressions for the stubs. In the example, 5-stub two-port sections of a [Formula: see text] phase shifter are designed by means of the proposed approach.

A new type of Robust broadband GaN HEMT-based high power high-pass/low-pass 22.5° phase shifter

2013 ◽  
Vol 56 (2) ◽  
pp. 347-349 ◽  
Author(s):  
Khelifa Hettak ◽  
Tyler N. Ross ◽  
Gabriel Cormier ◽  
Jim S. Wight
Keyword(s):  
High Power ◽  
Phase Shifter ◽  
Gan Hemt ◽  
Low Pass ◽  
New Type ◽  
High Pass

scholarly journals A 5-bit X-band GaN HEMT-Based Phase Shifter

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 658
Author(s):  
Hsien-Chin Chiu ◽  
Chun-Ming Chen ◽  
Li-Chun Chang ◽  
Hsuan-Ling Kao
Keyword(s):  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
Primary Phase ◽  
High Electron ◽  
Frequency Range ◽  
Amplitude Error ◽  
X Band ◽  
High Pass ◽  
Rms Amplitude

In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. The design includes high-pass/low-pass networks for the 180° phase bit, two high-pass/bandpass networks separated for the 45° and 90° phase bits, and two transmission lines based on traveling wave switch and capacitive load networks that are separated for the 11.25° and 22.5° phase bits. The state-to-state variation in the insertion loss is 11.8 ± 3.45 dB, and an input/output return loss of less than 8 dB was obtained in a frequency range of 8–12 GHz. Moreover, the phase shifter achieved a low root mean square (RMS) phase error and RMS amplitude error of 6.23° and 1.15 dB, respectively, under the same frequency range. The measured input-referred P1dB of the five primary phase shift states were larger than 29 dBm at 8 GHz. The RMS phase error and RMS amplitude error slightly increased when the temperature increased from 25 to 100 °C. The on-chip phase shifter exhibited no dc power consumption and occupied an area of 2 × 3 mm2.

Sign in / Sign up

Export Citation Format

Share Document