Phase noise of electrical oscillators due to multi‐Lorentzian noise sources based on the LTV model

2017 ◽  
Vol 11 (11) ◽  
pp. 1549-1557
Author(s):  
Seyed Amir Hashemi
Keyword(s):  
Phase Noise ◽  
Noise Sources ◽  
Electrical Oscillators

Extension of the LTV Phase Noise Model of Electrical Oscillators for the Output Harmonics

2012 ◽  
Vol E95.C (12) ◽  
pp. 1846-1856 ◽  
Author(s):  
Seyed Amir HASHEMI ◽  
Hassan GHAFOORIFARD ◽  
Abdolali ABDIPOUR
Keyword(s):  
Phase Noise ◽  
Noise Model ◽  
Electrical Oscillators

scholarly journals Structure of All-Digital Frequency Synthesiser for IoT and IoV Applications

Electronics ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 29 ◽  
Author(s):  
Marijan Jurgo ◽  
Romualdas Navickas
Keyword(s):  
Phase Noise ◽  
Digital Filter ◽  
High Performance ◽  
Domain Model ◽  
Infinite Impulse Response ◽  
Type I ◽  
Noise Sources ◽  
Digital Frequency ◽  
Digitally Controlled Oscillator ◽  
The Impact

In recent years number of Internet of Things (IoT) services and devices is growing and Internet of Vehicles (IoV) technologies are emerging. Multiband transceiver with high performance frequency synthesisers should be used to support a multitude of existing and developing wireless standards. In this paper noise sources of an all-digital frequency synthesiser are discussed through s-domain model of frequency synthesisers, and the impact of noise induced by main blocks of synthesisers to the overall phase noise of frequency synthesisers is analysed. Requirements for time to digital converter (TDC), digitally controlled oscillator (DCO) and digital filter suitable for all-digital frequency synthesiser for IoT and IoV applications are defined. The structure of frequency synthesisers, which allows us to meet defined requirements, is presented. Its main parts are 2D Vernier TDC based on gated ring oscillators, which can achieve resolution close to 1 ps; multi core LC-tank DCO, whose tuning range is 4.3–5.4 GHz when two cores are used and phase noise is −116.4 dBc/Hz at 1 MHz offset from 5.44 GHz carrier; digital filter made of proportional and integral gain stages and additional infinite impulse response filter stages. Such a structure allows us to achieve a synthesiser’s in-band phase noise lower than −100 dBc/Hz, out-of-band phase noise equal to −134.0 dBc/Hz and allows us to set a synthesiser to type-I or type-II and change its order from first to sixth.

A simulation technique to compute phase noise induced from cyclostationary noise sources in RF oscillators

2013 ◽  
Author(s):  
Federico Pepe ◽  
Andrea Bonfanti ◽  
Salvatore Levantino ◽  
Paolo Maffezzoni ◽  
Carlo Samori ◽  
...  
Keyword(s):  
Phase Noise ◽  
Simulation Technique ◽  
Noise Sources ◽  
Rf Oscillators

scholarly journals Joint Effect of Heterogeneous Intrinsic Noise Sources on Instability of MEMS Resonators

2016 ◽  
Vol 19 (2) ◽  
pp. 59
Author(s):  
Olga Jakšić ◽  
Ivana Jokić ◽  
Miloš Frantlović ◽  
Danijela Randjelović ◽  
Dragan Tanasković ◽  
...  
Keyword(s):  
Phase Noise ◽  
Noise Analysis ◽  
Intrinsic Noise ◽  
Noise Spectrum ◽  
Joint Effect ◽  
Noise Sources ◽  
Mems Resonators ◽  
Micro Resonator ◽  
Micro Cantilever ◽  
Nyquist Noise

This article's focus is on the numerical estimation of the overall instability of microelectromechanical-system-based (MEMS) resonators, caused by intrinsic noise mechanisms that are different in nature (electrical, mechanical or chemical). Heterogeneous intrinsic noise sources in MEMS resonators that have been addressed here are Johnson–Nyquist noise, 1/f noise, noise caused by temperature fluctuations and adsorptiondesorption induced noise. Their models are given first (based on analytical modeling or based on empirical expressions with experimentally obtained parameters). Then it is shown how each one contributes to the phase noise, a unique figure of merit of resonators instability. Material dependent constants  and knee position in noise spectrum, needed for empirical formulae referring to 1/f noise, have been obtained experimentally, by measurements of noise of MEMS components produced in the Centre of Microelectronic Technologies of the Institute of Chemistry, Technology and Metallurgy in Belgrade. According to these measurements,  varies in the range from 0.776.10-4 to 2.26.10-4 and cut off frequency for 1/f noise varies from 147 Hz to 1 kHz. The determined values are then used for the modeling of micro-resonator phase noise with electrical origin and overall phase noise of a micro-resonator. Numerical example for calculation of overall phase noise is given for a micro-cantilever, produced by the same technology as measured components. The outlined noise analysis can be easily extended and applied to noise analysis of MEMS resonator of an arbitrary shape.

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