Complementary metal‐oxide semiconductor Doherty power amplifier based on voltage combining method

Chenxi Zhao; Byungjoon Park; Bumman Kim

doi:10.1049/iet-map.2013.0241

Complementary metal‐oxide semiconductor Doherty power amplifier based on voltage combining method

IET Microwaves Antennas & Propagation ◽

10.1049/iet-map.2013.0241 ◽

2014 ◽

Vol 8 (3) ◽

pp. 131-136

Author(s):

Chenxi Zhao ◽

Byungjoon Park ◽

Bumman Kim

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Doherty Power Amplifier

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A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22626 ◽

2021 ◽

Author(s):

Cheng Cao ◽

Jiangfan Liu ◽

Yubing Li ◽

Tao Tan ◽

Zemeng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Bandwidth Expansion ◽

Semiconductor Process

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Complementary metal–oxide–semiconductor 60 GHz power amplifier by in‐phase power combining and digitally assisted power back‐off efficiency enhancement

IET Microwaves Antennas & Propagation ◽

10.1049/iet-map.2015.0182 ◽

2016 ◽

Vol 10 (1) ◽

pp. 79-87 ◽

Cited By ~ 5

Author(s):

Nan Li ◽

Yu Hao ◽

Yuan Liang ◽

Wei Fei ◽

Xiuping Li ◽

...

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

60 Ghz ◽

Efficiency Enhancement ◽

Power Combining

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2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor

IEEE Transactions on Components Packaging and Manufacturing Technology ◽

10.1109/tcpmt.2012.2227260 ◽

2013 ◽

Vol 3 (8) ◽

pp. 1286-1292 ◽

Cited By ~ 7

Author(s):

Kuei-Cheng Lin ◽

Hwann-Kaeo Chiou ◽

Po-Chang Wu ◽

Wei-Hsien Chen ◽

Chun-Lin Ko ◽

...

Keyword(s):

Metal Oxide ◽

Quality Factor ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

High Quality Factor ◽

Oxide Semiconductor ◽

Spiral Inductor ◽

Wafer Level ◽

High Quality

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A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc01 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC01 ◽

Cited By ~ 1

Author(s):

Hamid Kiumarsi ◽

Yutaka Mizuochi ◽

Hiroyuki Ito ◽

Noboru Ishihara ◽

Kazuya Masu

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Process

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Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2180269 ◽

2006 ◽

Vol 24 (3) ◽

pp. 835-840 ◽

Cited By ~ 1

Author(s):

Samar M. Abdelsayed ◽

M. Jamal Deen ◽

Natalia K. Nikolova

Keyword(s):

Metal Oxide ◽

Low Power ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Layout Design ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Integrated

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A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc01 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC01 ◽

Cited By ~ 1

Author(s):

Hamid Kiumarsi ◽

Yutaka Mizuochi ◽

Hiroyuki Ito ◽

Noboru Ishihara ◽

Kazuya Masu

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Process

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2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 μm complementary metal–oxide–semiconductor technologies

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1474414 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1034-1037

Author(s):

Chao-Chih Hsiao ◽

Chin-Wei Kuo ◽

Chien-Chih Ho ◽

Yi-Jen Chan

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Power Amplifier ◽

Voltage Control ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Control Oscillator ◽

Microwave Integrated Circuits ◽

Monolithic Microwave Integrated Circuits

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Compact high‐linearity, high‐efficiency complementary metal–oxide–semiconductor power amplifier with post‐distortion lineariser for wireless local area network and Wireless Gigabit Alliance applications

IET Microwaves Antennas & Propagation ◽

10.1049/iet-map.2015.0530 ◽

2016 ◽

Vol 10 (4) ◽

pp. 464-470 ◽

Cited By ~ 2

Author(s):

Kuei‐Cheng Lin ◽

Hwann‐Kaeo Chiou ◽

Chun‐Lin Ko ◽

Po‐Chang Wu ◽

Hann‐Huei Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

High Efficiency ◽

Wireless Local Area Network ◽

Local Area Network ◽

Complementary Metal Oxide Semiconductor ◽

Local Area ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Area Network

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Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams

Applied Physics Letters ◽

10.1063/1.96738 ◽

1986 ◽

Vol 48 (10) ◽

pp. 668-669 ◽

Cited By ~ 16

Author(s):

J. Y. Lee ◽

R. L. Kubena

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Ion Beams ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Focused Ion Beams

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Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Nano Research ◽

10.1007/s12274-021-3567-9 ◽

2021 ◽

Author(s):

Zhen Li ◽

Katherine R. Jinkins ◽

Dingzhou Cui ◽

Mingrui Chen ◽

Zhiyuan Zhao ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Semiconductor Electronics

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