scholarly journals GATE THRESHOLD VOLTAGE MEASUREMENT METHOD FOR SIC MOSFET WITH CURRENT-SOURCE GATE DRIVER

2021 ◽  
Author(s):  
X. Wang ◽  
H. Wu ◽  
V. Pickert
Keyword(s):  
Threshold Voltage ◽  
Measurement Method ◽  
Current Source ◽  
Voltage Measurement ◽  
Gate Driver

scholarly journals Fast Transistor Threshold Voltage Measurement Method for High-Speed, High-Accuracy Advanced Process Characterization

2014 ◽  
Vol 22 (5) ◽  
pp. 1138-1149 ◽  
Author(s):  
Tseng-Chin Luo ◽  
Mango C-T Chao ◽  
Huan-Chi Tseng ◽  
Masaharu Goto ◽  
Philip A. Fisher ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Measurement Method ◽  
High Accuracy ◽  
Voltage Measurement ◽  
Process Characterization

scholarly journals A Novel Current-Source-Based Gate Driver with Active Voltage Balancing Control for Series-Connected GaN HEMTs

2021 ◽  
pp. 1-1
Author(s):  
Zhengda Zhang ◽  
Chunhui Liu ◽  
Mengzhi Wang ◽  
Yunpeng Si ◽  
Yifu Liu ◽  
...  
Keyword(s):  
Current Source ◽  
Voltage Balancing ◽  
Gate Driver ◽  
Gan Hemts ◽  
Balancing Control

scholarly journals A Cycle Voltage Measurement Method and Application in Grounding Grids Fault Location

Energies ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1929 ◽  
Author(s):  
Fan Yang ◽  
Yongan Wang ◽  
Manling Dong ◽  
Xiaokuo Kou ◽  
Degui Yao ◽  
...  
Keyword(s):  
Measurement Method ◽  
Fault Location ◽  
Voltage Measurement ◽  
Grounding Grids

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

2011 ◽  
Vol 679-680 ◽  
pp. 649-652 ◽  
Author(s):  
Jang Kwon Lim ◽  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Mietek Bakowski ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Velocity ◽  
Switching Frequency ◽  
Switching Losses ◽  
Insulator Interface ◽  
Gate Driver ◽  
Recombination Velocity ◽  
Emitter Junction

The 1.2 kV SiC JFET and BJT devices have been investigated and compared with respect to total losses including the gate driver losses in a DC-DC converter configuration. The buried grid, Normally-on JFET devices with threshold voltage of -50 V and -10V are compared to BJT devices with ideal semiconductor and passivating insulator interface and an interface with surface recombination velocity of 4.5•104 cm/s yielding agreement to the reported experimental current gain values. The conduction losses of both types of devices are independent of the switching frequency while the switching losses are proportional to the switching frequency. The driver losses are proportional to the switching frequency in the JFET case but to a large extent independent of the switching frequency in the BJT case. The passivation of the emitter junction modeled here by surface recombination velocity has a significant impact on conduction losses and gate driver losses in the investigated BJT devices.

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