Local donor doping by proton implantation in p

2008 ◽  
Author(s):  
V. Komarnitskyy ◽  
P. Hazdra
Keyword(s):  
Donor Doping ◽  
Proton Implantation

Optimised proton implantation step for vertical-cavity surface-emitting lasers

1993 ◽  
Vol 29 (10) ◽  
pp. 918-919 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
S. Gramlich ◽  
U. Zeimer ◽  
J. Sebastian ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Proton Implantation ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

2021 ◽  
Vol 118 (9) ◽  
pp. 092101
Author(s):  
Kevin Lee ◽  
Ryan Page ◽  
Vladimir Protasenko ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Donor Doping

New insights into the 6H-type hexagonal perovskite solid solution BaTiO3−δ: Influence of acceptor and donor doping on crystal structure and electrical properties

2017 ◽  
Vol 310 ◽  
pp. 154-165 ◽  
Author(s):  
Fayçal Bourguiba ◽  
Ah. Dhahri ◽  
S.E.L. Kossi ◽  
J. Dhahri ◽  
K. Khirouni ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
Electrical Properties ◽  
Donor Doping

Local Lifetime Control in 4H-SiC by Proton Irradiation

2018 ◽  
Vol 924 ◽  
pp. 436-439 ◽  
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka ◽  
Adolf Schöner
Keyword(s):  
Low Temperature ◽  
Proton Irradiation ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Pin Diode ◽  
Radiation Defects ◽  
Excess Carrier ◽  
Low Temperature Annealing ◽  
Irradiation Energy ◽  
Proton Implantation

The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV protons at fluences up to 1x1011cm-2. Radiation defects were characterized by DLTS and C-V profiling; excess carrier dynamics were measured by the OCVD and analyzed using the calibrated device simulator ATLAS from Silvaco, Inc. Results show that proton implantation followed by low temperature annealing can be used for controllable local lifetime reduction in SiC devices. The dominant recombination centre is the Z1/2defect, whose distribution can be set by irradiation energy and fluence. The local lifetime reduction, which improves diode recovery, can be monitored by OCVD response and simulated using the SRH model accounting for the Z1/2defect.

Proton Implantation Effect on ZnO Nanorod Growth

2007 ◽  
Vol 50 (95) ◽  
pp. 1538 ◽  
Author(s):  
Sun-Hong Park ◽  
Sang-Wook Han
Keyword(s):  
Zno Nanorod ◽  
Proton Implantation ◽  
Nanorod Growth

Proton Implantation Mechanism in GaN Layer Transfer by Using the Ion-Cut Process

2007 ◽  
Vol 50 (95) ◽  
pp. 1542 ◽  
Author(s):  
H. J. Woo ◽  
H. W. Choi ◽  
G. D. Kim ◽  
W. Hong ◽  
J. K. Kim ◽  
...  
Keyword(s):  
Layer Transfer ◽  
Proton Implantation

scholarly journals Proton Implantation into Tungsten Phosphate Glass Using Corona Discharging

2013 ◽  
Vol 48 ◽  
pp. 81-84
Author(s):  
T. Shoji ◽  
H. Ikeda ◽  
H. Mayama ◽  
H. Nishiyama ◽  
J. Nishii
Keyword(s):  
Phosphate Glass ◽  
Proton Implantation
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