Explosive magnetic generator of high-power high-voltage pulses

2003 ◽  
Author(s):  
A.I. Kucherov
Keyword(s):  
High Voltage ◽  
High Power ◽  
Explosive Magnetic Generator ◽  
Voltage Pulses ◽  
Magnetic Generator

Low-Inductance Section for a Fitch Generator of High-Power High-Voltage Pulses

2005 ◽  
Vol 48 (4) ◽  
pp. 474-481 ◽  
Author(s):  
N. I. Boyko ◽  
A. V. Bortsov ◽  
L. S. Evdoshenko ◽  
A. I. Zarochentsev ◽  
V. M. Ivanov ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Voltage Pulses

A High-Efficiency Generator of High-Power High-Voltage Pulses of Microsecond Duration

2021 ◽  
Vol 64 (3) ◽  
pp. 385-388
Author(s):  
S. V. Korotkov ◽  
Yu. V. Aristov ◽  
A. L. Zhmodikov ◽  
D. A. Korotkov
Keyword(s):  
High Voltage ◽  
High Power ◽  
High Efficiency ◽  
Voltage Pulses

A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration

2007 ◽  
Vol 50 (2) ◽  
pp. 224-227 ◽  
Author(s):  
Yu. V. Aristov ◽  
V. B. Voronkov ◽  
I. V. Grekhov ◽  
A. K. Kozlov ◽  
S. V. Korotkov ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Rise Time ◽  
Nanosecond Duration ◽  
Power Semiconductor ◽  
Semiconductor Switch ◽  
Voltage Pulses

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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