Voltage instability/collapse - an overview

1997 ◽  
Author(s):  
R.J. Koessler
Keyword(s):  
Voltage Instability

Automatic Load Shedding Schemes against Voltage Instability in the Hellenic System

2007 ◽  
Author(s):  
V. C. Nikolaidis ◽  
C. D. Vournas ◽  
G. A. Fotopoulos ◽  
G. P. Christoforidis ◽  
E. Kalfaoglou ◽  
...  
Keyword(s):  
Load Shedding ◽  
Voltage Instability

Application of Bifurcation Theory to Voltage Stability in Power System

2013 ◽  
Vol 811 ◽  
pp. 643-646
Author(s):  
Xue Song Zhou ◽  
Mo Chen ◽  
You Jie Ma
Keyword(s):  
Power System ◽  
Bifurcation Analysis ◽  
Bifurcation Point ◽  
Bifurcation Theory ◽  
Voltage Stability ◽  
Formal Definition ◽  
Voltage Stabilization ◽  
Advantages And Disadvantages ◽  
Voltage Instability ◽  
Dynamic Bifurcation

In order to study on the problem of voltage stability of power system, this paper describes the static bifurcation analysis and the dynamic bifurcation analysis in voltage stabilization analysis of power system and its relationship with the voltage stability,discusses the voltage instability caused by two main bifurcation formal definition, the occurrence of the conditions and the calculation of the bifurcation point, and points out advantages and disadvantages of various algorithms. Finally the paper looks forward to further study of the bifurcation theory in terms of voltage stability.

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Sign in / Sign up

Export Citation Format

Share Document