Measurement of mechanical properties of boron doped silicon microresonators using a resonant frequency technique

1995 ◽  
Author(s):  
D.D. Uttamchandani
Keyword(s):  
Mechanical Properties ◽  
Resonant Frequency ◽  
Boron Doped ◽  
Doped Silicon

Heavily boron‐doped silicon membranes with enhanced mechanical properties for x‐ray mask substrate

1994 ◽  
Vol 65 (11) ◽  
pp. 1385-1387 ◽  
Author(s):  
Ho‐Jun Lee ◽  
Chul‐Hi Han ◽  
Choong‐Ki Kim
Keyword(s):  
Mechanical Properties ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes

Low temperature mechanical properties of boron-doped silicon

1992 ◽  
Vol 68 (20) ◽  
pp. 3052-3055 ◽  
Author(s):  
R. E. Mihailovich ◽  
J. M. Parpia
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Dynamic characteristics of dislocations in highly boron-doped silicon

2001 ◽  
Vol 89 (10) ◽  
pp. 5788-5790 ◽  
Author(s):  
I. Yonenaga ◽  
T. Taishi ◽  
X. Huang ◽  
K. Hoshikawa
Keyword(s):  
Dynamic Characteristics ◽  
Boron Doped ◽  
Doped Silicon

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

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