scholarly journals Effect of different coupling agents on the interfacial properties of tube–internally insulated foam materials interface in a composite cross‐arm under water environment

High Voltage ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 242-254
Author(s):  
Yunpeng Liu ◽  
Le Li ◽  
Hechen Liu ◽  
Xiaolin Li ◽  
Donggen Liu ◽  
...  
Keyword(s):  
Water Environment ◽  
Interfacial Properties ◽  
Coupling Agents

Interfacial properties of phosphate glass fibres/PLA composites: Effect of the end functionalities of oligomeric PLA coupling agents

2010 ◽  
Vol 70 (13) ◽  
pp. 1854-1860 ◽  
Author(s):  
Papia Haque ◽  
Andrew J. Parsons ◽  
Ian A. Barker ◽  
Ifty Ahmed ◽  
Derek J. Irvine ◽  
...  
Keyword(s):  
Phosphate Glass ◽  
Interfacial Properties ◽  
Coupling Agents ◽  
Glass Fibres

Investigating the use of coupling agents to improve the interfacial properties between a resorbable phosphate glass and polylactic acid matrix

2012 ◽  
Vol 28 (3) ◽  
pp. 354-366 ◽  
Author(s):  
Muhammad Sami Hasan ◽  
Ifty Ahmed ◽  
Andrew J Parsons ◽  
Chris D Rudd ◽  
Gavin S Walker ◽  
...  
Keyword(s):  
Polylactic Acid ◽  
Phosphate Glass ◽  
Interfacial Properties ◽  
Coupling Agents

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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