scholarly journals >25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer

2021 ◽  
Author(s):  
L. W. Hallman ◽  
B. S. Ryvkin ◽  
E. A. Avrutin ◽  
J. T. Kostamovaara
2008 ◽  
Vol 128 (5) ◽  
pp. 732-737
Author(s):  
Hiroyuki Ichikawa ◽  
Masashi Ito ◽  
Chie Fukuda ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
...  

Author(s):  
Eustace K. Mwarania ◽  
Ji Wang ◽  
Christophe Piraud ◽  
Yuk Tak Chow ◽  
Laurence Reekie ◽  
...  

1998 ◽  
Vol 146 (1-6) ◽  
pp. 167-172 ◽  
Author(s):  
Takashige Omatsu ◽  
Akihiro Katoh ◽  
Kenji Okada ◽  
Satoshi Hatano ◽  
Akira Hasegawa ◽  
...  

Author(s):  
Satoru Ito ◽  
Yuji Suzuki

Optimal control scheme for transient temperature profile inside electronic devices such as pulsed laser diode is developed based on the adjoint equation of one-dimensional heat conduction. Joule heating with a thin-film heater is employed as the control input in order to minimize temperature changes of a thin active layer embedded in a modeled laser diode. In numerical simulations assuming the light-emitting time period of 1 μs, temperature variation of the active layer is successfully suppressed by 80% with the heat input prior to the onset of the laser pulse. It is found that the Fourier number of the layer between the control heater and the active layer is the key parameter to minimize the temperature fluctuations. We also successfully demonstrate suppression of the temperature change in a MEMS-based experimental setup.


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