InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

2008 ◽  
Vol 44 (3) ◽  
pp. 243 ◽  
Author(s):  
K.L. Lew ◽  
S.F. Yoon ◽  
H. Tanoto ◽  
K.P. Chen ◽  
C.L. Dohrman ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Si Substrate

InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

1997 ◽  
Vol 18 (11) ◽  
pp. 559-561 ◽  
Author(s):  
D.A. Ahmari ◽  
M.T. Fresina ◽  
Q.J. Hartmann ◽  
D.W. Barlage ◽  
M. Feng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

scholarly journals Ballistic two-dimensional lateral heterojunction bipolar transistor

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Leonardo Lucchesi ◽  
Gaetano Calogero ◽  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Two Dimensional

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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