Intersubband all-optical switching in submicron high-mesa SCH waveguide structure with wide-gap II-VI-based quantum wells

2006 ◽  
Vol 42 (23) ◽  
pp. 1352 ◽  
Author(s):  
K. Akita ◽  
R. Akimoto ◽  
T. Hasama ◽  
H. Ishikawa ◽  
Y. Takanashi
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Waveguide Structure ◽  
All Optical ◽  
Wide Gap ◽  
All Optical Switching

1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

2002 ◽  
Vol 14 (4) ◽  
pp. 495-497 ◽  
Author(s):  
T. Akiyama ◽  
N. Georgiev ◽  
T. Mozume ◽  
H. Yoshida ◽  
A.V. Gopal ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Coupled Quantum Wells ◽  
Intersubband Absorption ◽  
All Optical ◽  
All Optical Switching

scholarly journals Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

2014 ◽  
Vol 104 (1) ◽  
pp. 011102 ◽  
Author(s):  
Alexandre Bazin ◽  
Kevin Lenglé ◽  
Mathilde Gay ◽  
Paul Monnier ◽  
Laurent Bramerie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Wavelength Conversion ◽  
Silicon On Insulator ◽  
All Optical ◽  
All Optical Switching

Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery

1998 ◽  
Vol 07 (01) ◽  
pp. 37-45 ◽  
Author(s):  
L. Gastaldi ◽  
C. Rigo ◽  
D. Campi ◽  
L. Faustini ◽  
C. Coriasso ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Guided Wave ◽  
Multiple Quantum ◽  
Photogenerated Carrier ◽  
Fast Recovery ◽  
All Optical ◽  
All Optical Switching

This paper focuses on photogenerated carrier nonlinearities in InGaAs/InAlAs quantum wells (QWs) that use low optical power, display a relatively fast recovery time (280 ps down to 35 ps), and excellent optical properties in terms of the sharpness of the absorption edge. A guided-wave, all-optical switching device is demonstrated as an application, at a wavelength which is of interest to telecommunication systems (1.55 μm) and requires low control energy (<0.3 pJ/pulse). A key issue here is that the controlled introduction of defects in the QW heterostructures allows the time response to be fastened significantly without being detrimental to the performance of the device in terms of on-off contrast and switching energy. The preparation procedure is compatible with metalorganic-based growth techniques widespread in optoelectronics at 1.55 μm.

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