Hybrid magnetic tunnel junction/vertical cavity surface emitting laser field sensor device

2001 ◽  
Vol 37 (24) ◽  
pp. 1459 ◽  
Author(s):  
Yiping He ◽  
Qiang Zhang ◽  
A.V. Nurmikko ◽  
J. Slaughter ◽  
R.W. Dave ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Laser Field ◽  
Magnetic Tunnel Junction ◽  
Cavity Surface ◽  
Sensor Device ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Field Sensor ◽  
Vertical Cavity

scholarly journals Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 187 ◽  
Author(s):  
Chih-Chiang Shen ◽  
Yun-Ting Lu ◽  
Yen-Wei Yeh ◽  
Cheng-Yuan Chen ◽  
Yu-Tzu Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Indium Tin Oxide ◽  
Optical Loss ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Output Performance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3997-4001 ◽  
Author(s):  
Shigeaki Sekiguchi ◽  
Tomoyuki Miyamoto ◽  
Tadayoshi Kimura ◽  
Gen Okazaki ◽  
Fumio Koyama ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Current Injection ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Device Resistance ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

2009 ◽  
Vol 15 (3) ◽  
pp. 838-843 ◽  
Author(s):  
Yutaka Onishi ◽  
Nobuhiro Saga ◽  
Kenji Koyama ◽  
Hideyuki Doi ◽  
Takashi Ishizuka ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

2015 ◽  
Vol 107 (9) ◽  
pp. 091105 ◽  
Author(s):  
J. T. Leonard ◽  
E. C. Young ◽  
B. P. Yonkee ◽  
D. A. Cohen ◽  
T. Margalith ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Patrycja Śpiewak ◽  
Michał Wasiak ◽  
Robert P. Sarzała
Keyword(s):  
Tunnel Junction ◽  
Active Area ◽  
Cavity Surface ◽  
Emission Characteristics ◽  
Santa Barbara ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
The University ◽  
The Impact ◽  
Vertical Cavity

This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing wave anti-node, and positioning of the active area at different anti-nodes are considered.

A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

2020 ◽  
Vol 46 (9) ◽  
pp. 854-858
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
N. A. Maleev ◽  
A. A. Blokhin ◽  
A. G. Kuz’menkov ◽  
...  
Keyword(s):  
Spectral Range ◽  
Tunnel Junction ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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