High-frequency noise performance of SiGe p-channel MODFETs

2000 ◽  
Vol 36 (7) ◽  
pp. 674 ◽  
Author(s):  
S.J. Koester ◽  
J.O. Chu ◽  
C.S. Webster
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise

Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1−xAs/GaAs field-effect transistor

2021 ◽  
pp. 2150238
Author(s):  
Mahdi Vadizadeh ◽  
Mohammad Fallahnejad
Keyword(s):  
Radio Frequency ◽  
Effective Mass ◽  
Mole Fraction ◽  
High Frequency ◽  
Cutoff Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise ◽  
Gaas Structure ◽  
Simulation Results

In this paper, for the first time, changes in the effective mass (EM) of electron and hole with mole fraction are taken into account for extracting the benchmarking parameters of analog/radio frequency (RF) and high-frequency noise performance of junctionless (JL)-Ga[Formula: see text]In[Formula: see text]As/GaAs via simulation. In the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure, considering changes in the effective mass with mole fraction is called a with-EM state, while the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure without considering the changes in effective mass with mole fraction is called a without-EM state. The simulation results show that, per [Formula: see text], the maximum transconductance in the with-effective mass (EM) state is [Formula: see text] mS/[Formula: see text]m, which is reduced by 8% compared to the without-EM state. The JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device in the with-EM state has the unity gain cutoff frequency of [Formula: see text] GHz, minimum noise figure of [Formula: see text] db, and available associated gain of [Formula: see text] db. The [Formula: see text] and [Formula: see text] parameters in the with-EM state decreased by 10% and 38%, respectively, compared to the without-EM state. Moreover, [Formula: see text] in the with-EM state increased by 65% compared to the without-EM state. Our simulation results indicated that an increase in electron effective mass with the increased [Formula: see text] can limit the analog/RF frequency and high-frequency noise performance of the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device.

Impact of Downscaling on High-Frequency Noise Performance of Bulk and SOI MOSFETs

2004 ◽  
Vol 51 (10) ◽  
pp. 1605-1612 ◽  
Author(s):  
G. Pailloncy ◽  
C. Raynaud ◽  
M. Vanmackelberg ◽  
F. Danneville ◽  
S. Lepilliet ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise

High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

2008 ◽  
Vol 55 (10) ◽  
pp. 2718-2727 ◽  
Author(s):  
J.-P. Raskin ◽  
G. Pailloncy ◽  
D. Lederer ◽  
F. Danneville ◽  
G. Dambrine ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Gate Length ◽  
Noise Performance ◽  
High Frequency Noise

Impact of down scaling on high-frequency noise performance of bulk and SOI MOSFETs

2003 ◽  
Author(s):  
Gilles Dambrine ◽  
C. Raynaud ◽  
M. Vanmackelberg ◽  
Francois Danneville ◽  
Guillaume Pailloncy ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Noise ◽  
Noise Performance ◽  
High Frequency Noise

Case study: Simulation and control of high frequency noise for commercial vehicle cab considering leak

2019 ◽  
Vol 67 (4) ◽  
pp. 315-329
Author(s):  
Rongjiang Tang ◽  
Zhe Tong ◽  
Weiguang Zheng ◽  
Shenfang Li ◽  
Li Huang
Keyword(s):  
High Frequency ◽  
Commercial Vehicle ◽  
Frequency Noise ◽  
High Frequency Noise ◽  
Simulation And Control ◽  
And Control
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