Generation of arbitrary optical waveforms by Fourier synthesis using three continuous-wave semiconductor lasers

2000 ◽  
Vol 36 (3) ◽  
pp. 224 ◽  
Author(s):  
M. Hyodo ◽  
K.S. Abedin ◽  
N. Onodera
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Fourier Synthesis

Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation

2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ultrashort Pulse ◽  
Continuous Wave ◽  
Pulse Generation ◽  
Power Scaling ◽  
Optically Pumped ◽  
Ultrashort Pulse Generation

scholarly journals High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use

2014 ◽  
Vol 19 (10) ◽  
pp. 101502
Author(s):  
Takahiro Fujimoto ◽  
Yusuke Imai ◽  
Kazuyoku Tei ◽  
Shinobu Ito ◽  
Hideko Kanazawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Heat Source ◽  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Temperature Heat

Efficiency of continuous-wave solar pumped semiconductor lasers

2013 ◽  
Vol 47 ◽  
pp. 194-198 ◽  
Author(s):  
Stanley Johnson ◽  
Franko Küppers ◽  
Stanley Pau
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave

scholarly journals Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Ahmed Bakry
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Dynamic Range ◽  
Optical Feedback ◽  
Harmonic Distortion ◽  
Wave Band ◽  
Third Order ◽  
Signal Characteristics ◽  
Simulated Time ◽  
Photon Resonance

This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.

scholarly journals Мощные непрерывные лазеры InGaAs/AlGaAs (1070 нм) с расширенным латеральным волноводом мезаполосковой конструкции

2021 ◽  
Vol 55 (4) ◽  
pp. 344
Author(s):  
И.С. Шашкин ◽  
А.Ю. Лешко ◽  
В.В. Шамахов ◽  
Н.В. Воронкова ◽  
В.А. Капитонов ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Optical Power ◽  
Current Curve ◽  
Mesa Stripe

Semiconductor lasers with a 10 μm wide lateral waveguide of a mesa-stripe design were developed and their light characteristics were studied. Lasers with a 4.6mm long cavity is shown to have a continuous wave (CW) optical power of 2.6W at a heatsink temperature of 25◦C. Lasers with a shorter cavity (< 3mm) showed a lower value of the maximum optical power due to a thermal rollover of the light-current curve.

scholarly journals Ultra-low threshold lasing through phase front engineering via a metallic circular aperture

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhixin Wang ◽  
Filippos Kapsalidis ◽  
Ruijun Wang ◽  
Mattias Beck ◽  
Jérôme Faist
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Threshold Power ◽  
Circular Aperture ◽  
Phase Front ◽  
Reflective Coating ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Reflective Coatings ◽  
Electrical Consumption

AbstractSemiconductor lasers with extremely low threshold power require a combination of small volume active region with high-quality-factor cavities. For ridge lasers with highly reflective coatings, an ultra-low threshold demands significantly suppressing the diffraction loss at the facets of the laser. Here, we demonstrate that introducing a subwavelength aperture in the metallic highly reflective coating of a laser can correct the phase front, thereby counter-intuitively enhancing both its modal reflectivity and transmissivity at the same time. Theoretical and experimental results manifest a decreasing in the mirror loss by over 40% and an increasing in the transmissivity by 104. Implementing this method on a small-cavity quantum cascade laser, room-temperature continuous-wave lasing operation at 4.5 μm wavelength with an electrical consumption power of only 143 mW is achieved. Our work suggests possibilities for future portable applications and can be implemented in a broad range of optoelectronic systems.

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