Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

2000 ◽  
Vol 36 (1) ◽  
pp. 91 ◽  
Author(s):  
L. Zhou ◽  
A.T. Ping ◽  
F. Khan ◽  
A. Osinsky ◽  
I. Adesida
Keyword(s):  
Ohmic Contacts ◽  
P Type

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

The Effect of Heat Treatment on Ni/Au Ohmic Contacts to p-Type GaN

1999 ◽  
Vol 176 (1) ◽  
pp. 773-777 ◽  
Author(s):  
Li-Chien Chen ◽  
Jin-Kuo Ho ◽  
Fu-Rong Chen ◽  
Ji-Jung Kai ◽  
Li Chang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Ohmic Contacts ◽  
P Type

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Process Design for Non-Alloyed Contacts to InP-Based Laser Devices

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
W. C. Dautremont-Smith ◽  
S. N. G. Chu ◽  
S. J. Pearton ◽  
M. Geva ◽  
...  
Keyword(s):  
Process Design ◽  
Ohmic Contacts ◽  
Electron Gun ◽  
Deposition Parameters ◽  
Heat Treated ◽  
Single Side ◽  
Almost All ◽  
P Type ◽  
Laser Devices ◽  
Potential Use

ABSTRACTPl/Ti and W thin films on n- and p- type InP and related materials have been investigated for potential use as a refractory ohmic contacts for conventional, single-side coplanar contacted and self-aligned barrier hetcrostructurc laser devices. Pt and Ti films were deposited sequentially by electron gun evaporation, while the W layer was rf sputtered, both onto p+ -In0.53Ga0.47As (Zn doped 5×l018cm−3) and n−- InP (S doped, 5×l018cm−3). The deposition parameters of the two metal systems were optimized to produce adherent films with the lowest possible induced stress. Almost all the studied systems performed as ohmic contacts already as-deposited and were heat treated by means of rapid thermal processing in the temperature range of 300–900°C. The final contact processing conditions were tuned to provide the lowest possible contact resistance values accompanied by low mechanical stress and stable microstructure.

The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride.

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet ◽  
Th. Kehagias ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Film Thickness ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Epitaxial Relationship ◽  
Si Doped ◽  
P Type ◽  
20 Nm

AbstractWhen the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

1985 ◽  
Vol 6 (10) ◽  
pp. 525-527 ◽  
Author(s):  
R.C. Brooks ◽  
C.L. Chen ◽  
A. Chu ◽  
L.J. Mahoney ◽  
J.G. Mavroides ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Ohmic Contacts to p-Type InGaAs/InP with a Graded Bandgap Heterobarrier

1993 ◽  
Vol 318 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Rutherford Backscattering Spectrometry ◽  
Specific Contact Resistance ◽  
Superlattice Structure ◽  
Specific Contact ◽  
P Type ◽  
Metal Layers ◽  
Anneal Temperature ◽  
Graded Bandgap

ABSTRACTOhmic contacts to p-type InP with an In0.47Ga0.53As buffer layer and an interposed superlattice of 50 Å In0.47Ga0.53As/ 50 Å InP have been investigated. Initial studies of contacts to In0.47Ga0.53As/ InP without the superlattice structure have shown that Pd/Zn/Pd/Au metallization produced a lower specific contact resistance (pc = 1.1 × 10−4 Ω cm2) than Pd/Ge/Au, and over a wider range of anneal temperature than Au/Zn/Au. The incorporation of the superlattice in the p-In0.47Ga0.53As/ InP structure resulted in Pd/Zn/Pd/Au contacts with pc of 3.2 × 10−5 Ω cm2 as-deposited and 7.5 × 10−6 Ω.cm2 after a 500 °C anneal. The presence of Pd/Zn in the metallization was shown as important in reducing pc. Significant intermixing of the metal layers and In0.47Ga0.53As occured at ≥ 350 °C, as revealed by Rutherford backscattering spectrometry.

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