Tunable distributed Bragg reflector laser-electroabsorption modulator based on identical active layer monolithic integration approach

1999 ◽  
Vol 35 (19) ◽  
pp. 1637 ◽  
Author(s):  
A. Ramdane ◽  
D. Meichenin ◽  
E. Vergnol ◽  
H. Sik ◽  
A. Ougazzaden
Keyword(s):  
Active Layer ◽  
Monolithic Integration ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Electroabsorption Modulator ◽  
Integration Approach

Monolithic integration of Mach-Zehnder modulators with Sampled Grating Distributed Bragg Reflector lasers

2002 ◽  
Author(s):  
Jonathon S. Barton ◽  
Erik J. Skogen ◽  
Milan L. Mašanović ◽  
Steven P. DenBaars ◽  
Larry A. Coldren
Keyword(s):  
Monolithic Integration ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Sampled Grating

InGaAs/AlGaAs distributed Bragg reflector lasers with curved surface gratings for monolithic integration

1997 ◽  
Vol 33 (17) ◽  
pp. 1464 ◽  
Author(s):  
M. Uemukai ◽  
A. Yoshimoto ◽  
N. Matsumoto ◽  
T. Suhara ◽  
H. Nishihara ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Bragg Reflector ◽  
Curved Surface ◽  
Distributed Bragg Reflector

Enhancement of Exciton and Biexciton Luminescence in CuCl QDs on Dielectric Multilayers

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3841-3844 ◽  
Author(s):  
H. Kurisu ◽  
J. Horie ◽  
K. Nagoya ◽  
S. Yamamoto ◽  
M. Matsuura
Keyword(s):  
Quantum Dots ◽  
Active Layer ◽  
Luminescence Band ◽  
Free Exciton ◽  
Bragg Reflector ◽  
Photoluminescence Properties ◽  
Exciton Luminescence ◽  
Distributed Bragg Reflector ◽  
Excitation Laser ◽  
Luminescence Behavior

We investigated photoluminescence properties of the exciton and the biexciton in CuCl quantum dots embedded in an SiO 2 matrix on (λ/4) TiO 2/(λ/4) SiO 2 dielectric multilayers of the distributed Bragg reflector. The intensities of the free exciton luminescence band and the biexciton luminescence bands are enhanced by factors 2 and 6 times in comparison with those in only CuCl quantum dots embedded in an SiO 2 matrix. The origin of this luminescence behavior is partly reflection effects of the luminescence and excitation laser lights but additional effects need to be considered. One possible candidate is the strong exciton-photon interaction due to the confinement effect of the photons in the active layer with CuCl quantum dots.

Monolithic 1.55μm Surface Emitting Laser Structure With In0.53Al0.14Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown by Meatalorganic Chemical Vapor Deposition Method

1997 ◽  
Vol 484 ◽  
Author(s):  
J.-H. Baek ◽  
B. Lee ◽  
W. S. Han ◽  
J. M. Smith ◽  
B. S. Jeong ◽  
...  
Keyword(s):  
Active Layer ◽  
Reflectance Spectrum ◽  
Chemical Vapor ◽  
Bragg Reflector ◽  
Flat Band ◽  
Chemical Vapor Deposition Method ◽  
Distributed Bragg Reflector ◽  
Surface Emitting Laser ◽  
Single Cavity

AbstractVertical cavity surface emitting laser (VCSEL) structure designed at 1.55 μm was grown by low pressure metalorganic chemical vapor deposition method. The VCSEL structure contains top and bottom distributed Bragg reflector (DBR) and single cavity active layer. The DBR was grown with In0.53Al0.14Ga0.33As and In0.52Al0.48As quarter lambda wavelength layer, alternatively. The growth temperature was as high as 750°C to prevent ordering and phase separation of the In0 52Al0.48As layer. The In0.52Al0.48As buffer layer was subsequently grown on the InP buffer layer in order to make an abrupt uniform interface. Unity reflectance was achieved at the center of 1.55 μm with 35.5 pairs undoped DBR layer. The reflectance spectrum of undoped DBR showed a wide flat-band region (greater than 50 nm) where the reflectivity was more than 99.5 %. The center wavelength of DBR was previously determined by an in-situ laser reflectometry technique during the growth of the whole structure. An infrared laser operating at 1.53 μm, which was the design wavelength of DBR layer was used as an in-situ measuring tool. The In0.53Ga0.47As multiple quantum well was used as a cavity layer. The reflectance spectrum of VCSEL structure, which included a single cavity active layer, showed excellent square shaped stop band and also showed an absorption region at the center of the flat band.

scholarly journals InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

2020 ◽  
Vol 11 (1) ◽  
pp. 8
Author(s):  
Cheng-Jie Wang ◽  
Ying Ke ◽  
Guo-Yi Shiu ◽  
Yi-Yun Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
Active Layer ◽  
Optical Pumping ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Central Wavelength ◽  
Light Emitting ◽  
Pl Spectra ◽  
Cavity Structure

InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

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