Monolithic, high transimpedance gain (3.3 k[ohm sign]), 40 Gbit/s InP-HBT-photoreceiver with differential outputs

1999 ◽  
Vol 35 (11) ◽  
pp. 897 ◽  
Author(s):  
A. Huber ◽  
D. Huber ◽  
T. Morf ◽  
H. Jäckel ◽  
C. Bergamaschi ◽  
...  
Keyword(s):  
Transimpedance Gain

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

Complementary Metal-Oxide-Semiconductor Symmetric Current-Conveyor Transimpedance Amplifier

2020 ◽  
Vol 20 (8) ◽  
pp. 4793-4798
Author(s):  
Daseul Yoon ◽  
Ji-Hoon Kim ◽  
Sung Min Park
Keyword(s):  
Power Dissipation ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Current Conveyor ◽  
Oxide Semiconductor ◽  
Transimpedance Amplifier ◽  
Signal Loss ◽  
Noise Current ◽  
Transimpedance Gain

This paper presents a novel symmetric current-conveyor transimpedance amplifier (SCC-TIA) implemented in a 0.13-μm CMOS technology for the applications of LiDAR systems, where a modifiedcascode configuration is newly proposed for input current buffer to deliver the photo-currents to the following voltage-mode inverter TIA without signal loss. Measured results of the proposed SCC-TIA demonstrate 69-dBΩ transimpedance gain, 410-MHz bandwidth, 13-pA/sqrt (Hz) average noise current spectral density, and 20-mW power dissipation from a single 1.2-V supply. Chip core occupies the area of 280×130 μm2.

A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs

2001 ◽  
Vol 36 (9) ◽  
pp. 1309-1313 ◽  
Author(s):  
H. Shigematsu ◽  
M. Sato ◽  
T. Suzuki ◽  
T. Takahashi ◽  
K. Imanishi ◽  
...  
Keyword(s):  
Transimpedance Gain
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