980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

1998 ◽  
Vol 34 (13) ◽  
pp. 1312 ◽  
Author(s):  
G.W. Yang ◽  
Z.T. Xu ◽  
X.Y. Ma ◽  
J.Y. Xu ◽  
J.M. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Quantum Well Lasers ◽  
Organic Chemical ◽  
Metal Organic

Fabrication of InxGa1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

2019 ◽  
Vol 290 ◽  
pp. 147-152
Author(s):  
Shamsul Amir Abdul Rais ◽  
Hayatun Najihah ◽  
Zainuriah Hassan ◽  
Ahmad Shuhaimi
Keyword(s):  
Quantum Well ◽  
Chemical Vapour Deposition ◽  
Sapphire Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Patterned Sapphire Substrate ◽  
Quantum Well Structure ◽  
Metal Organic ◽  
Multi Quantum Well

Abstract. In an effort to successfully fabricate InGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in InxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 5 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. 6 pairs of InGaN/GaN multi-quantum well structure grown by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 9:1. The crystal and optical properties of the samples were characterized using field effect atomic force microscopy, high resolution x-ray diffraction, and photoluminescence spectroscopy.

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