InGaP/GaAs ballistic collection transistors with buried polycrystalline GaAs under base electrode
Keyword(s):
Keyword(s):
2013 ◽
Vol 60
(10)
◽
pp. 2904-2913
◽
1982 ◽
Vol 17
(2)
◽
pp. 226-230
◽
Keyword(s):
1997 ◽
Vol 14
(1-4)
◽
pp. 211-217
◽
Keyword(s):