High performance low power low voltage adder

1997 ◽  
Vol 33 (8) ◽  
pp. 681 ◽  
Author(s):  
A. Wu ◽  
C.K. Ng
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage

Design and Layout of a High-Performance PWM Control Class D Amplifiers IC Systems

2012 ◽  
Vol 203 ◽  
pp. 469-473
Author(s):  
Ruei Chang Chen ◽  
Shih Fong Lee
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Design Flow ◽  
Total Power ◽  
Cmos Process ◽  
Low Power Circuits ◽  
Class D ◽  
Total Power Consumption ◽  
Power Circuits

This paper presents the design and implementation of a novel pulse width modulation control class D amplifiers chip. With high-performance, low-voltage, low-power and small area, these circuits are employed in portable electronic systems, such as the low-power circuits, wireless communication and high-frequency circuit systems. This class D chip followed the chip implementation center advanced design flow, and then was fabricated using Taiwan Semiconductor Manufacture Company 0.35-μm 2P4M mixed-signal CMOS process. The chip supply voltage is 3.3 V which can operate at a maximum frequency of 100 MHz. The total power consumption is 2.8307 mW, and the chip area size is 1.1497×1.1497 mm2. Finally, the class D chip was tested and the experimental results are discussed. From the excellent performance of the chip verified that it can be applied to audio amplifiers, low-power circuits, etc.

CMOS DEVICES ARCHITECTURES AND TECHNOLOGY INNOVATIONS FOR THE NANOELECTRONICS ERA

2006 ◽  
Vol 16 (01) ◽  
pp. 193-219 ◽  
Author(s):  
S. DELEONIBUS ◽  
B. de SALVO ◽  
T. ERNST ◽  
O. FAYNOT ◽  
T. POIROUX ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Short Channel Effects ◽  
Short Channel ◽  
Trade Offs ◽  
Future System ◽  
The Future ◽  
Channel Effects

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials ( Ge , diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

A low voltage low power high performance FGMOS based current mirror

2017 ◽  
Vol 10 ◽  
pp. 263-271 ◽  
Author(s):  
Charu Rana ◽  
Neelofer Afzal ◽  
Dinesh Prasad
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Current Mirror

A low-voltage, low-power voltage reference based on subthreshold MOSFETs

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740069 ◽  
Author(s):  
Liangwei Dong ◽  
Yueli Hu
Keyword(s):  
Low Power ◽  
Temperature Coefficient ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Channel Length ◽  
Voltage Reference ◽  
Single Chip ◽  
Low Power Cmos ◽  
Cmos Voltage Reference

A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/[Formula: see text]C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80[Formula: see text]C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.

scholarly journals Forced stack sleep transistor (FORTRAN): A new leakage current reduction approach in CMOS based circuit designing

2021 ◽  
Vol 34 (2) ◽  
pp. 259-280
Author(s):  
Sankit Kassa ◽  
Neeraj Misra ◽  
Rajendra Nagaria
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Modes Of Operation ◽  
Power Circuit ◽  
Current Reduction

Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low-voltage, and high-performance VLSI applications. This research article discusses a new low-power circuit design the approach of FORTRAN (FORced stack sleep TRANsistor), which decreases the leakage power efficiency in the CMOS-based circuit outline in VLSI domain. FORTRAN approach reduces leakage current in both active as well as standby modes of operation. Furthermore, it is not time intensive when the circuit goes from active mode to standby mode and vice-versa. To validate the proposed design approach, experiments are conducted in the Tanner EDA tool of mentor graphics bundle on projected circuit designs for the full adder, a chain of 4-inverters, and 4- bit multiplier designs utilizing 180nm, 130nm, and 90nm TSMC technology node. The outcomes obtained show the result of a 95-98% vital reduction in leakage power as well as a 15-20% reduction in dynamic power with a minor increase in delay. The result outcomes are compared for accuracy with the notable design approaches that are accessible for both active and standby modes of operation.

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