Ni/Ti/Pt ohmic contacts to p-GaAs for the heterojunction bipolar transistor process

1996 ◽  
Vol 32 (13) ◽  
pp. 1238 ◽  
Author(s):  
M. Yanagihara ◽  
A. Tamura
Keyword(s):  
Ohmic Contacts ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Das ◽  
S. A. Alterovitz
Keyword(s):  
Surface Layer ◽  
Sheet Resistance ◽  
Multilayer Structure ◽  
Ohmic Contacts ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Low Resistance ◽  
Resistance Surface ◽  
Specific Contact ◽  
P Type

AbstractA Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

scholarly journals Ballistic two-dimensional lateral heterojunction bipolar transistor

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Leonardo Lucchesi ◽  
Gaetano Calogero ◽  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Two Dimensional
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